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MTD3055E

TMOSIVN-ChannelEnhancement-ModePowerFieldEffectTransistorDPAKforSurfaceorInsertionMount

TMOSPOWERFET8AMPERESRDS(on)=0.15OHM60VOLTS

Motorola

Motorola, Inc

MTD3055EL

TMOSIVPowerFieldEffectTransistor(N-ChannelEnhancement-ModeSiliconGate)

Motorola

Motorola, Inc

MTD3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features 12A,60V.RDS(ON)=0.15Ω@VGS=10V Lowgatecharge. Fastswitchingspe

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTD3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50an

Motorola

Motorola, Inc

MTD3055V

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD3055V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTD3055V

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

MTD3055VL

M-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTD3055VL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50and60voltTMOSdevices.JustaswithourTMOS

Motorola

Motorola, Inc

MTD3055VL

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD3055VL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTD3055VLG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP3055

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

Motorola

Motorola, Inc

MTP3055

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1Ω-12ATO-220STripFET™MOSFET ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MTP3055E

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1Ω-12ATO-220STripFET™MOSFET ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MTP3055E

N-CHANNEL60V-0.1Q-12ATO-220STripFET??MOSFET

N-CHANNEL60V-0.1Ω-12ATO-220STripFET™MOSFET ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP3055E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP3055EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MTP3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

Motorola

Motorola, Inc

详细参数

  • 型号:

    MTA3055E

  • 制造商:

    ON Semiconductor

  • 功能描述:

    TMOSPWR 60V .15R TO220FP

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
MOT
24+
N/A
2680
询价
ON
23+
TO-220F
6893
询价
MOTOROLA/摩托罗拉
1950+
TO-220F
4856
只做原装正品现货!或订货假一赔十!
询价
MOTOROLA/摩托罗拉
2021+
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MOTCROLA
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
MTA3055E
25
25
询价
MOTOROLA/摩托罗拉
23+
ROHS
15000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MOTOROLA/摩托罗拉
22+
TO-220F
50000
只做原装正品,假一罚十,欢迎咨询
询价
MOTCROLA
1932+
TO-220F
466
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
MOTCROLA
589220
16余年资质 绝对原盒原盘 更多数量
询价
更多MTA3055E供应商 更新时间2024-11-27 16:00:00