| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MTY14N100 | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi | Motorola Motorola, Inc | Motorola | |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi | Motorola Motorola, Inc | Motorola | ||
Power Field Effect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
IscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.82Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MegaMOSTMFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •Uninterrupti | IXYS IXYS Corporation | IXYS |
详细参数
- 型号：
MTY14N100
- 制造商：
MOTOROLA
- 制造商全称：
Motorola, Inc
- 功能描述：
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
4520 |
询价 | ||||
MOT |
06+ |
TO-3PL |
500 |
原装库存 |
询价 | ||
ON |
23+ |
TO-264 |
6893 |
询价 | |||
onsemi(安森美) |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
23+ |
15887 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
23+ |
4000 |
正品原装货价格低qq:2987726803 |
询价 | ||||
ON/安森美 |
22+ |
TO-264 |
89151 |
询价 | |||
ON/安森美 |
24+ |
TO264 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
MINI-CIRCUITS |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
MINI |
22+ |
SMD |
8900 |
全新正品现货 有挂就有现货 |
询价 |