首页 >MXSMCJLCE8.0A>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MXSMCJLCE8.0A | 包装:散装 封装/外壳:DO-214AB,SMC 类别:电路保护 TVS - 二极管 描述:TVS DIODE 8VWM 13.6VC DO214AB | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | |
包装:散装 封装/外壳:DO-214AB,SMC 类别:电路保护 TVS - 二极管 描述:TVS DIODE 8VWM 13.6VC DO214AB | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE | SUNMATE | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORSTAND-OFFVOLTAGE-5.0TO190Volts | SPSEMIStarHope 瞬雷电子上海瞬雷科技有限公司 | SPSEMI | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE | SUNMATE | |||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORSTAND-OFFVOLTAGE-5.0TO190Volts | SPSEMIStarHope 瞬雷电子上海瞬雷科技有限公司 | SPSEMI | ||
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
400WATTTVSCOMPONENT | PROTEC Protek Devices | PROTEC | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR(VOLTAGE-5.0TO170Volts500WattPeakPulsePower) FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-15package •500Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime:typicallylessthan1.0psfrom0voltstoBV | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
500WATTPEAKPOWERTRANSIENTVOLTAGESUPPRESSORS FEATURES *500WattsSurgeCapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:Typicallylessthan1.0psfrom0volttoBVmin. *TypicalIRlessthan1mAabove10V *Hightemperaturesolderingguaranteed:260°C/10seconds/.375(9.5mm)leadlengt | BYTES Bytes | BYTES | ||
TECHNICALSPECIFICATIONSOFTRANSIENTVOLTAGESUPPRESSOR FEATURES *Glasspassivatedjunction *500WattsPeakPulsePowercapabilityon10/1000µswaveform *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime | DCCOM Dc Components | DCCOM | ||
TRANSIENTVOLTAGESUPPRESSOR | EIC EIC discrete Semiconductors | EIC | ||
POWER500WattsVOLTAGE5.0to170Volts Features •PlasticpackagehasUnderwritersLaboratory flammabilityclassification94V-0 •Glasspassivatedjunction •500Wpeakpulsepowersurgecapabilitywitha10/100μS waveform,repetitionrate(dutycycle):0.01 •Excellentclampingcapability •Lowincrementalsurgeresistance | DAESAN Daesan Electronics Corp. | DAESAN | ||
TRANSIENTVOLTAGESUPPRESSOR BREAKDOWNVOLTAGE:5.0---170V PEAKPULSEPOWER:500W FEATURES ◇PlasticpackagegasUnderwritersLaboratory FlammabilityClassification94V-0 ◇Glasspassivatedjunction ◇500Wpeakpulsepowercapabilitywitha10/1000µs waveform,repetitionrate(dutycycle):0.01 ◇Excellentc | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
TransientVoltageSuppressorDiodes | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
GLASSPASSIVATEDJUNCTIONTRANSIENTVOLTAGESUPPRESSOR VOLTAGEPOWER5.0to220Volts500Watts FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •GlasspassivatedchipjunctioninDO-15package •500Wsurgecapabilityat1ms •Excellentclampingcapability •Lowzenerimpedance •Fastresponsetime: | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
500WattsTransientVoltageSuppressorDiodes | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
500WATTPEAKPOWERTRANSIENTVOLTAGESUPPRESSORS VOLTAGERANGE5.0to180Volts500WattsPeakPower3.0WattsSteadyState FEATURES *500WattsSurgeCapabilityat1ms *Excellentclampingcapability *Fastresponsetime:Typicallylessthan1.0psfrom0volttoBVmin. *Lowzenerimpedance *TypicalIRlessthan1Aabove10Vz *Hight | UNIOHMUniohm 台湾厚声 | UNIOHM | ||
500WTRANSIENTVOLTAGESUPPRESSOR | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE |
产品属性
- 产品编号:
MXSMCJLCE8.0A
- 制造商:
Microchip Technology
- 类别:
电路保护 > TVS - 二极管
- 系列:
Military, MIL-PRF-19500
- 包装:
散装
- 类型:
齐纳
- 电压 - 反向断态(典型值):
8V
- 电压 - 击穿(最小值):
8.89V
- 不同 Ipp 时电压 - 箝位(最大值):
13.6V
- 电流 - 峰值脉冲 (10/1000µs):
100A
- 功率 - 峰值脉冲:
1500W(1.5kW)
- 电源线路保护:
无
- 应用:
通用
- 不同频率时电容:
100pF @ 1MHz
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
DO-214AB,SMC
- 供应商器件封装:
DO-214AB(SMCJ)
- 描述:
TVS DIODE 8VWM 13.6VC DO214AB
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
microchipdirect.com/images/dev |
23+ |
15420 |
原包装原标现货,假一罚十, |
询价 | |||
Microsemi(美高森美) |
23+ |
SMC(DO214AB) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
MICROCHIP/微芯 |
24+ |
SMT |
18000 |
诚以养德,用芯做事,全新原装原盒原标出货。 |
询价 | ||
Microsemi(美高森美) |
23+ |
SMCJ(DO214AB) |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
Microsemi |
1941+ |
N/A |
909 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
Microsemi |
22+ |
NA |
909 |
加我QQ或微信咨询更多详细信息, |
询价 |
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