首页 >MBR10H90CT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MBR10H90CT | MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvol | VAISH Vaishali Semiconductor | VAISH | |
MBR10H90CT | Dual High-Voltage Schottky Rectifiers DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
MBR10H90CT | Dual Common-Cathode High-Voltage Schottky Rectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
MBR10H90CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
MBR10H90CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
MBR10H90CT | Dual Common Cathode High Voltage Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
包装：管件 封装/外壳：TO-220-3 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 90V TO220AC | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
HighVoltageSchottkyRectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageSchottkyRectifier HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
DualHigh-VoltageSchottkyRectifiers DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualCommon-CathodeHigh-VoltageSchottkyRectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
MBR10H100CT,MBRF10H100CT&MBRB10H100CTSeries Features •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvol | VAISH Vaishali Semiconductor | VAISH | ||
HighVoltageSchottkyRectifiers HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageSchottkyRectifier HighVoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequenc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualCommon-CathodeHigh-VoltageSchottkyRectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageSchottkyRectifiers DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
MBR10H100CT,MBRF10H100CT&MBRB10H100CTSeries Features •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvol | VAISH Vaishali Semiconductor | VAISH | ||
PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
MBR10H90CT
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual High-Voltage Schottky Rectifiers
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2023+ |
TO-220AB |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220AB |
10000 |
公司只做原装正品 |
询价 | ||
VISHAY/威世 |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
VISHAY |
23+ |
TO-220AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY |
22+ |
TO-220AB |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VISHAY |
24+ |
TO-TO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
Vishay Semiconductor Diodes Di |
21+ |
TO220AC |
13880 |
公司只售原装,支持实单 |
询价 | ||
Vishay Semiconductor Diodes Di |
21+ |
TO220AC |
610880 |
本公司只售原装 支持实单 |
询价 | ||
SIRECT |
23+ |
TO263 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 |
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