MID122说明书PDF资料行情报价安森美半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MID122	文件：223.27 Kbytes Page：1 Pages	TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.	DCCOM Dc Components	DCCOM
MJD122	文件：137.52 Kbytes Page：8 Pages	ComplementaryDarlingtonPowerTransistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
MJD122	文件：284.04 Kbytes Page：8 Pages	ComplementaryDarlingtonPowerTransistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD122	文件：284.04 Kbytes Page：8 Pages	SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur	Motorola Motorola, Inc	Motorola
MJD122	文件：81.7 Kbytes Page：6 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
MJD122	文件：87.53 Kbytes Page：7 Pages	ComplementaryDarlingtonPowerTransistor	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD122	文件：232.98 Kbytes Page：9 Pages	LowvoltagepowerDarlingtontransistor	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
MJD122	文件：277.83 Kbytes Page：3 Pages	SiliconNPNepitaxialplanerTransistors Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor	MCCMicro Commercial Components 美微科美微科半导体股份有限公司	MCC
MJD122	文件：244.33 Kbytes Page：1 Pages	TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications.	DCCOM Dc Components	DCCOM
MJD122	文件：683.2 Kbytes Page：4 Pages	NPNPLASTICENCAPSULATETRANSISTORS Features: HighDCcurrentgain ElectricallysimilartopopularTIP122 *Built-inadamperdiodeatE-C	WEITRON Weitron Technology	WEITRON
MJD122	文件：136.31 Kbytes Page：7 Pages	ComplementaryDarlingtonPowerTransistor	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD122	文件：246.92 Kbytes Page：2 Pages	iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifierandlo	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MJD122	文件：106.5 Kbytes Page：8 Pages	ComplementaryDarlingtonPowerTransistor	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MJD122	文件：211.88 Kbytes Page：1 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications	TGS Tiger Electronic Co.,Ltd	TGS
MJD122	文件：315.34 Kbytes Page：2 Pages	iscSiliconNPNDarlingtonPowerTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MJD122	文件：408.73 Kbytes Page：5 Pages	COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications	CDIL Continental Device India Limited	CDIL
MJD122	文件：1.15875 Mbytes Page：3 Pages	TRANSISTOR(NPN) TRANSISTOR（NPN） FEATURES ∙HighDCCurrentGain ∙ElectricallySimilartoPopularTIP122 ∙Built-inaDamperDiodeatE-C	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司	JIANGSU
MJD122	文件：2.2067 Mbytes Page：3 Pages	TO-252-2LPlastic-EncapsulateTransistors TRANSISTOR（NPN） Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP122 ●Built-inaDamperDiodeatE-C	HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司	HDSEMI
MJD122	文件：205.51 Kbytes Page：1 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications	TGS Tiger Electronic Co.,Ltd	TGS
MJD122	文件：337.92 Kbytes Page：3 Pages	SiliconNPNepitaxialplanerTransistors	MCCMicro Commercial Components 美微科美微科半导体股份有限公司	MCC

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详细参数

型号：
MID122
制造商：
DCCOM
制造商全称：
Dc Components
功能描述：
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘扬芯城科技有限公司	MID-125A	OptiFuse	23+		6000	诚信服务，绝对原装原盘	询价
深圳市粤科源兴科技有限公司	MID-13A45	UNI	13+		19728	原装分销	询价
深圳市芯祺盛科技有限公司	MID-13A45	UNI原装	1801+	DIP-2	8965	只做原装现货、主营光电元器件/门市现货	询价
深圳市明嘉莱科技有限公司	MID-13A45	UNI	24+	DIP-2	880000	明嘉莱只做原装正品现货	询价
深圳市佳杰伟业科技有限公司	MID-13A45	UNI	2315+		4860	优势代理渠道,原装现货,可全系列订货	询价
贸泽芯城（深圳）电子科技有限公司	MID13A-45	UNI	23+		13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市河锋鑫科技有限公司	MID14512A3	IXYS	22+	Y4M5	9000	原厂渠道,现货配单	询价
易创佳业科技（深圳）有限公司	MID14512A3	IXYS	23+	Y4M5	9000	原装正品，支持实单	询价
深圳市凯斯宇科技有限公司	MID145-12A3	IXYS	2022	Y4-M5	58	原厂原装正品,价格超越代理	询价
深圳市博浩通科技有限公司	MID145-12A3	IXYS	23+	MODIGBTRBSOA1200V160AY4-	1690	专业代理销售半导体模块,能提供更多数量	询价

更多MID122供应商更新时间2024-11-22 18:30:00

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