| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJ3055 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SEME-LAB Seme LAB | SEME-LAB | |
MJ3055 | isc Silicon NPN Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ComplementaryPowerTransistors MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •Strai | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularMJE3055T •DCCurrentGainSpecifiedto10A •HighCurrentGain- | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
COMPLEMENTARYPOWERTRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TRANSISTOR(NPN) | FS First Silicon Co., Ltd | FS | ||
iscSiliconNPNPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeMJD2955 •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●ElectricallySimiartoMJE3055 ●DCCurrentGainSpecifiedto10A | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
TO-252-2LPlastic-EncapsulateTransistors FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
MJ3055
- 制造商：
SEME-LAB
- 制造商全称：
Seme LAB
- 功能描述：
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT/ON |
16+ |
TO-3 |
2000 |
原装现货假一罚十 |
询价 | ||
24+ |
5000 |
公司存货 |
询价 | ||||
MOT/ON |
专业铁帽 |
TO-3 |
2000 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
ON |
2020+ |
DIP |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
询价 | ||
ST/意法 |
23+ |
TO-3P |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ST |
23+ |
TO-3P |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
TO-3P |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
22+ |
TO-3P |
16900 |
支持样品 原装现货 提供技术支持! |
询价 | ||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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