| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJD127 | Complementary Darlington Power Transistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD127 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
MJD127 | SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | Motorola Motorola, Inc | Motorola | |
MJD127 | PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS) D▪PACKFORSURFACEMOUNTAPPLICATIONS •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LoadFormedforSurfaceMountApplications(NoSuffix) •StrightLead(I•PACK,-1Suffix) •ElectricallySimilartoPopularTIP127 | SamsungSamsung semiconductor 三星三星半导体 | Samsung | |
MJD127 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications | TGS Tiger Electronic Co.,Ltd | TGS | |
MJD127 | TRANSISTOR (PNP) TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | |
MJD127 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | CDIL | |
MJD127 | Silicon PNP epitaxial planer Transistors Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | |
MJD127 | TO-252-2L P lastic-Encapsulate Transistors TRANSISTOR(PNP) Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI | |
MJD127 | isc Silicon PNP Darlington Power Transistor DESCRIPTION •LowCollector-Emittersaturationvoltage •Leadformedforsurfacemountapplications •HighDCcurrentgain •100tested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforgeneralpurposeamplifierandlowspee | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJD127 | D-PAK for Surface Mount Applications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
MJD127 | PNP Silicon Darlington Transistor FEATURES •HighDCCurrentGain •ElectricallySimilartoPopularTIP127 •Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | FS First Silicon Co., Ltd | FS | |
MJD127 | TO-252-2L Plastic-Encapsulate Transistors FEATURES HighDCCurrentGain ElectricallySimilartoPopularTIP127 Built-inaDamperDiodeatE-C | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | |
MJD127 | Silicon PNP Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJD127 | Silicon PNP Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJD127 | Complementary Darlington Power Transistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
MJD127 | Silicon PNP epitaxial planer Transistors | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | |
MJD127 | isc Silicon PNP Darlington Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
MJD127 | Complementary Darlington Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD127 | Complementary Darlington Power Transistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Darl
- 性质：
低频或音频放大 （LF）
- 封装形式：
贴片封装
- 极限工作电压：
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
20W
- 放大倍数：
- 图片代号：
G-127
- vtest：
0
- htest：
999900
- atest：
8
- wtest：
20
详细参数
- 型号：
MJD127
- 功能描述：
达林顿晶体管 8A 100V Bipolar
- RoHS：
否
- 制造商：
Texas Instruments
- 配置：
Octal
- 晶体管极性：
NPN 集电极—发射极最大电压
- VCEO：
50 V 发射极 - 基极电压
- VEBO：
集电极—基极电压
- 最大直流电集电极电流：
0.5 A
- 最大工作温度：
+ 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOIC-18
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
TO-252 |
959 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
2015+ |
100 |
公司现货库存 |
询价 | ||||
CJ |
17+ |
TO-252 |
6048 |
全新原装正品s |
询价 | ||
ON/安森美 |
24+ |
DPAK |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
CJ/长电 |
2122+ |
TO-252 |
11980 |
只做原装进口正品,假一赔十,价格优势 |
询价 | ||
ON |
23+ |
SOT-252 |
372500 |
一级分销商 |
询价 | ||
CJ/长电 |
22+ |
TO-252 |
7500 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
CJ |
23+ |
TO252 |
52500 |
原厂原装正品 |
询价 | ||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
CJ(江苏长电/长晶) |
2023+ |
N/A |
4550 |
全新原装正品 |
询价 |
相关规格书
更多- MJD127(-1,T4)
- MJD2955
- MJD30
- MJD30C
- MJD31C
- MJD32C
- MJD42C
- MJD47
- MJD55H11
- MJD6039(-1,T4)
- MJE102
- MJE104
- MJE105K
- MJE1091
- MJE1093
- MJE1101
- MJE1103
- MJE1291
- MJE13004
- MJE13005
- MJE13006
- MJE13007
- MJE13008
- MJE13070
- MJE15028
- MJE16002
- MJE1661
- MJE171
- MJE180
- MJE182
- MJE2010
- MJE2020
- MJE205
- MJE205K
- MJE2091
- MJE2093
- MJE220
- MJE222
- MJE224
- MJE230
- MJE232
- MJE234
- MJE240
- MJE242
- MJE244
相关库存
更多- MJD29
- MJD29C
- MJD3055
- MJD31
- MJD32
- MJD41C
- MJD44H11
- MJD50
- MJD6036(-1,T4)
- MJE101
- MJE103
- MJE105
- MJE1090
- MJE1092
- MJE1100
- MJE1102
- MJE1290
- MJE13003
- MJE13004
- MJE13005
- MJE13006
- MJE13007
- MJE13009
- MJE13071
- MJE15030
- MJE1660
- MJE170
- MJE172
- MJE181
- MJE200
- MJE2011
- MJE2021
- MJE2050
- MJE2090
- MJE2092
- MJE210
- MJE221
- MJE223
- MJE225
- MJE231
- MJE233
- MJE235
- MJE241
- MJE243
- MJE250