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MJE200

5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High

Motorola

Motorola, Inc

MJE200

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE200

NPNEpitaxialSiliconTransistor

Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) •ComplementtoMJE210

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE200

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollector–EmitterSaturationVoltage- •DCCurrentGain-BandwidthProduct •HighDCCurrentGain •ComplementtoMJE210 APPLICATIONS •Designedforlowvoltage,low-power,high-gainaudioamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE200

ComplementarySiliconPowerPlasticTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE200

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

MJE200

SiliconNPNtransistorinaTO-126FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE210. Applications Designedforgeneralaudioamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

MJE200G

ComplementarySiliconPowerPlasticTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE200G

ComplementarySiliconPowerPlasticTransistors

Thesedevicesaredesignedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •HighDCCurrentGain •LowCollector−EmitterSaturationVoltage •HighCurrent−Gain−BandwidthProduct •AnnularConstructionforLowLeakage •TheseDevicesarePb−FreeandareRoHSCo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJS200

LightningSurgeWithstandFuse

bel

Bel Fuse Inc.

MJS200-R

TYPEMJSLIGHTNINGSURGEWITHSTANDFUSE

bel

Bel Fuse Inc.

MK200

TypeMKPrecisionPowerFilmRadial-LeadResistors

Caddock

Caddock Electronics, Inc.

ML200MHI

ML200MHISERIES

MPD

MPD (Memory Protection Devices)

ML200SE

2W,SingleOutputUltra-MiniatureSMTDC/DCConverters

MPD

MPD (Memory Protection Devices)

ML200SEI

2W,HighIsolationUltra-MiniatureSMTDC/DCConverters

MPD

MPD (Memory Protection Devices)

ML200X

Ultra-Miniature,2WSingle&DualSMTDC/DCConverters

MPD

MPD (Memory Protection Devices)

MMA-200

LightningSurgeProtectorsforElectronicsEquipmentM-RESTER

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

MMBT200

PNPGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT200

PNPGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT200

PNPGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    MJD200TF

  • 功能描述:

    两极晶体管 - BJT

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON/ONSemiconductor/安森
24+
TO-252
6200
新进库存/原装
询价
ON
23+
2800
正品原装货价格低qq:2987726803
询价
SABKEN
TO-3P
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
FAIRCHILD/仙童
21+
TO-252
30000
只做正品原装现货
询价
MOTOROLA
16+
7860
原装现货假一罚十
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ONSEMI
2021+
N/A
6800
只有原装正品
询价
FAIRCHILD
22+
原厂原封
2000
原装现货库存.价格优势
询价
ON
22+
SOT252
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多MJD200TF供应商 更新时间2024-11-22 15:30:00