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MJD44H11T4

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

Motorola

Motorola, Inc

MJD44H11T4

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4

Complementary power transistors

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJD44H11T4

包装:剪切带(CT) 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PWR NPN 8A 80V DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 8A DPAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJD44H11T4-A

Complementary power transistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MJD44H11T4G

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4G

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11T4G

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 8A DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    MJD44H11T4

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    剪切带(CT)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1V @ 400mA,8A

  • 电流 - 集电极截止(最大值):

    1µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    60 @ 2A,1V

  • 频率 - 跃迁:

    85MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS PWR NPN 8A 80V DPAK

供应商型号品牌批号封装库存备注价格
ST
24+
TO-252-3
32350
深圳存库原装现货
询价
ST(意法半导体)
23+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
询价
原装
24+
标准
49644
热卖原装进口
询价
STM
15+
原厂原装
57500
进口原装现货假一赔十
询价
STM
SOT252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
ST/意法
1815+
TO-252-3
2999
原装正品 可含税交易
询价
ST/意法
24+
TO-252
2047
只做原厂渠道 可追溯货源
询价
ST(意法半导体)
23+
DPAK
10000
只做原装现货 假一赔万
询价
ST(意法半导体)
22+
DPAK
20
QQ询价 绝对原装正品
询价
ON
23+
TO252
10000
原装正品!假一罚十!
询价
更多MJD44H11T4供应商 更新时间2024-11-26 16:36:00