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NTE3060

0.3??Single Digit Numeric Display, Seven Segment, Common Cathode

Description: TheNTE3056throughNTE3060are0.3inch(7.62mm)heightsingledigit,sevensegment,commoncathodedisplays.TheNTE3056andNTE3057utilizeLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3059utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrat

NTE

NTE Electronics

NTE3060

0.3 Single Digit Numeric Display, Seven Segment, Common Cathode

Description: TheNTE3056throughNTE3060are0.3inch(7.62mm)heightsingledigit,sevensegment,commoncathodedisplays.TheNTE3056andNTE3057utilizeLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3059utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrat

NTE

NTE Electronics

NTE3061

0.3??Single Digit Numeric Display, Seven Segment, Common Anode

Description: TheNTE3061throughNTE3064are0.3inch(7.62mm)heightsingledigit,sevensegment,commonanodedisplays.TheNTE3061utilizesLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3063utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrate.TheNTE306

NTE

NTE Electronics

NTE3064

0.3??Single Digit Numeric Display, Seven Segment, Common Anode

Description: TheNTE3061throughNTE3064are0.3inch(7.62mm)heightsingledigit,sevensegment,commonanodedisplays.TheNTE3061utilizesLEDchipswhicharemadefromGaAsPonaGaAssubstrate.TheNTE3063utilizesLEDchipswhicharemadefromGaPonatransparentGaPsubstrate.TheNTE306

NTE

NTE Electronics

NTE3068

0.4??Single Digit Numeric Display Seven Segment, RHDP

Description: TheNTE3068throughNTE3071are0.4inch(10.16mm)heightsingledigitdisplays.TheNTE3068andNTE3069devicesutilizeLEDchipswhicharemadefromGaPonatransparentGaPsubstrate.TheNTE3070andNTE3071devicesutilizechipswhicharemadefromGaAsPonatransparentGaPsubs

NTE

NTE Electronics

OTBE306KNPIR-F

DC/ACDualRatedCapacitorsProtected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications TypeOTBisacapacitorwitharobustconstructionconsistingofapaperoracombinationofpaperandfilmdielectricsystemwithfoilelectrodes,andisprotectedbyapressuresensitiveinterrupter.TheOTBisUL

CDE

Cornell Dubilier Electronics

OTBE306KNPIR-F

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

CDE

Cornell Dubilier Electronics

OTBE306KNPIR-F

DC/ACDualRatedCapacitors

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

DC/ACDualRatedCapacitorsProtected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications TypeOTBisacapacitorwitharobustconstructionconsistingofapaperoracombinationofpaperandfilmdielectricsystemwithfoilelectrodes,andisprotectedbyapressuresensitiveinterrupter.TheOTBisUL

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

Protected,HighVoltage,Paper-Film/FoilCapacitorsforAC&DCApplications

CDE

Cornell Dubilier Electronics

OTBF306KNPIR-F

DC/ACDualRatedCapacitors

CDE

Cornell Dubilier Electronics

P-306-DB

300SeriesDeepBracket(DB)

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

P-306-DB

MultipleDensitySolderEyelet

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

PBPC306

3.0ABRIDGERECTIFIER

Features •HighCurrentCapability •SurgeOverloadRatingto50APeak •HighCaseDielectricStrengthof1500V •IdealforPrintedCircuitBoardApplication •ULListedUnderRecognizedComponentIndex,FileNumberE94661

DIODES

Diodes Incorporated

PBSS306NX

100V,4.5ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

PBSS306NX

100V,4.5ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    NTE306

  • 制造商:

    NTE Electronics

  • 功能描述:

    LED-DISPLAY-YELLOW

供应商型号品牌批号封装库存备注价格
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
NTE
23+
39353
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NTE
2011+
DIPSOP4
20000
原装现货
询价
67
全新原装 货期两周
询价
2022+
63
全新原装 货期两周
询价
更多NTE306供应商 更新时间2024-11-22 11:06:00