NEZ1011-4E

4W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic

NEZ1011-4E

N-CHANNEL GaAs MESFET

4WX,Ku-BANDPOWERGaAsMESFET DESCRIPTION TheNEZ1011-4EandNEZ1414-4EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhigh outputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwith onlya50Wexternalcircuit.To

EIA1011-4P

10.7-11.7GHz,4WInternallyMatchedPowerFET

10.7-11.7GHz,4WInternallyMatchedPowerFET •10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(30TYPICAL) •EIBFEATURESHIGHIP3(49dBmTYPICAL) •+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB •

EIB1011-4P

10.7-11.7GHz,4WInternallyMatchedPowerFET

10.7-11.7GHz,4WInternallyMatchedPowerFET •10.7-11.7GHzBANDWIDTHANDINPUT/OUTPUTIMPEDANCEMATCHEDTO50OHM •EIAFEATURESHIGHPAE(30TYPICAL) •EIBFEATURESHIGHIP3(49dBmTYPICAL) •+36.5/+35.5dBmTYPICALP1dBOUTPUTPOWERFOREIA/EIB •9/8dBTYPICALG1dBPOWERGAINFOREIA/EIB •

EIC1011-4

10.70-11.70GHz4-WattInternally-MatchedPowerFET

FEATURES •10.70–11.70GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+36.0dBmOutputPowerat1dBCompression •6.5dBPowerGainat1dBCompression •30PowerAddedEfficiency •-46dBcIM3atPo=25.5dBmSCL •100TestedforDC,RF,andRTH

EIM1011-4

10.7-11.7GHzMulti-StagePowerAmplifier

FLM1011-4F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-4FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPower

TIM1011-4L

MICROWAVEPOWERGaAsFET

FEATURES ■HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ■HIGHGAIN G1dB=7.5dBat10.7GHzto11.7GHz ■BROADBANDINTERNALLYMATCHEDFET ■HERMETICALLYSEALEDPACKAGE

TIM1011-4UL

MICROWAVEPOWERGaAsFET

FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=36.5dBmat10.7GHzto11.7GHz ･HIGHGAIN G1dB=9.5dBat10.7GHzto11.7GHz ･LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=24.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE