AE417

E-pHEMT MMIC

AE417_14

Low Noise Amplifier for CATV, Satellite

AE4170B11473

包装：盒 封装/外壳：模块，SMA 连接器 类别：滤波器 RF 滤波器 描述：4170 MHZ CAVITY BANDPASS FILTER

AM417

RATIOMETRICVOLTAGETRANSMITTER

AM417

Ratiometricinstrumentationamplifierwithadjustableoutputstage

FEATURES •Instrumentationamplifierinputfor positiveinputvoltages:0...200mV •Adjustablegain •Commonmodeinputrange(CMIR): 1.3…VCC-2.2V •Outputvoltageratiometrictothe supply:0.5...4.5V •Lowoffset •Lowoffsetdrift •Supplyvoltagerange: 5V±5(ratiometricrange)

AM417

Ratiometricinstrumentationamplifierwithadjustableoutputstage

AM417

Ratiometricinstrumentationamplifierwithadjustableoutputstage

TYPICALAPPLICATIONS •Amplificationofresistorbridgesignals •Voltagemeasuremente.g.temperaturesensors •CurrentmeasurementviaShuntresistors •Amplificationcircuitryforsensingelementse.g.siliconpressuresensingelements •Differentialinputcircuitformicroprocessors/ADC-a

AN417

Fromnickel-cadmiumtonickel-hydridefastbatterycharger

AN-417

Quad150MHzRail-to-RailAmplifier

PRODUCTDESCRIPTION TheAD8044isaquad,lowpower,voltagefeedback,highspeedamplifierdesignedtooperateon+3V,+5V,or±5Vsupplies.Ithastruesingle-supplycapabilitywithaninputvoltagerangeextending200mVbelowthenegativerailandwithin1Vofthepositiverail. FEA

AN-417

LowPower,LowNoiseandDistortionail-to-RailOutputAmplifiers

GENERALDESCRIPTION TheADA4841-1/ADA4841-2areunitygainstable,lownoiseanddistortion,rail-to-railoutputamplifiersthathaveaquiescentcurrentof1.5mAmaximum.Despitetheirlowpowerconsumption,theseamplifiersofferlowwidebandvoltagenoiseperformanceof2.1nV/√Hzand1.4pA/

AOD417

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications. Features VDS(V)=-30V

AOD417

P-ChannelEnhancementModeFieldEffectTransistor

AOD417

iscP-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=-25A@TC=25℃ •DrainSourceVoltage- :VDSS=-30V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=34mΩ(Max) •100avalanchetested •MinimumLot-to-Lo

AOD417

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

AOI417

P-Channel40V(D-S)MOSFET

AOI417

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

AOU417

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAOU417isPb-free(meetsROHS&Sony259specifications).AOU417LisaGreenProductorde

AOU417

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

AOU417

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-18A@TC=25℃ ·DrainSourceVoltage :VDSS=-30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

AOU417L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAOU417isPb-free(meetsROHS&Sony259specifications).AOU417LisaGreenProductorde