AFGH4L40T120RW-STD

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 40 A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyin TO2474−leadpackage,thisdeviceoffersgoodperformancewithlow onstatevoltageandlowswitchinglossesforbothhardandsoft switchingtopologiesinautomotiveapplications. Features ExtremelyEfficientTrench

AFGH4L40T120RW

IGBT-Power,Single,N-Channel,FieldStopVII(FS7),SCR,PowerTO247-4L1200V,1.4V,40A

Description Usingthenovelfieldstop7thgenerationIGBTtechnology inTO2474−leadpackage,thisdeviceofferstheoptimum performancewithlowonstatevoltageandminimalswitchinglosses forbothhardandsoftswitchingtopologiesinautomotiveapplications. Features ExtremelyEffici

AFGH4L40T120RWD-STD

IGBT–Power,Co-PAKN-Channel,FieldStopVII(FS7),SCR,TO247-4L1200V,1.67V,40A

Description Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2474−leadpackage,thisdeviceoffersgood performancewithlowonstatevoltageandlowswitchinglossesfor bothhardandsoftswitchingtopologiesinautomotiveapplications. Features Extremel

FGH4L40T120LQD

IGBT-UltraFieldStop1200V,40A,VCE(Sat)=1.55V,TO2474L

ThisInsulatedGateBipolarTransistor(IGBT)featuresarobustand cost−effectiveUltraFieldStopTrenchconstruction,andprovides superiorperformanceindemandingswitchingapplications,offering bothlowon−statevoltageandminimalswitchingloss.TheIGBTis wellsuitedformotordrive

FGH4L40T120SWD

IGBT-Power,Co-PAKN-Channel,FieldStopVII(FS7),NONSCR,TO247-4L1200V,1.7V,40A

Usingthenovelfieldstop7thgenerationIGBTtechnologyandthe Gen7DiodeinTO2474−leadpackage,FGH4L40T120SWDdevice offerstheoptimumperformancewithlowswitchingandconduction lossesforhighefficiencyoperationsinvariousapplicationslikeSolar, UPSandESS. Features •Maxim