APM3055LUC-TUL

N-Channel Enhancement Mode MOSFET

Features ·30V/20A,RDS(ON)=75mW(typ.)@VGS=10V RDS(ON)=100mW(typ.)@VGS=4.5V ·SuperHighDenseCellDesign ·ReliableandRugged ·LeadFreeAvailable(RoHSCompliant) Applications ·PowerManagementinDesktopComputerorDC/DCConverters

APM3055LUV

N-ChannelEnhancementModeMOSFET

Features •30V/12A,RDS(ON)=100mΩ(max)@VGS=10V RDS(ON)=200mΩ(max)@VGS=4.5V •SuperHighDenseCellDesign •HighPowerandCurrentHandlingCapability •TO-252andSOT-223Packages Applications •SwitchingRegulators •SwitchingConverters

APM3055LUV-CTR

N-ChannelEnhancementModeMOSFET

Features •30V/12A,RDS(ON)=100mΩ(max)@VGS=10V RDS(ON)=200mΩ(max)@VGS=4.5V •SuperHighDenseCellDesign •HighPowerandCurrentHandlingCapability •TO-252andSOT-223Packages Applications •SwitchingRegulators •SwitchingConverters

BQ3055

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

BQ3055

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

BQ3055DBT

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

BQ3055DBT

CEDVGasGaugeandBatteryPackManager

BQ3055DBTR

2-Series,3-Series,and4-SeriesLi-IonBatteryPackManager

BQ3055DBTR

CEDVGasGaugeandBatteryPackManager

BQ3055EVM

EvaluationKit

INTRODUCTION ThiskitcontainseverythingneededforrapidprototypingwiththeSA310KR3-phasedriver.Withamultitude ofcircuitoptions,theEK76offersversatilitywhenincomestoconnectinginputs,measuringoutputs, andconditioningsignalstothespecificapplicationenvironment.High-

BX3055

RFAMPLIFIERMODEL

CEA3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

CEA3055

N-Channel60-V(D-S)MOSFET

CEA3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES •60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. •HighdensecelldesignforlowRDS(ON) •Ruggedandreliable. •SOT-89Package

CEA3055L

N-Channel60-V(D-S)MOSFET

CED3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CET3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,4A,RDS(ON)=100mΩ@VGS=10V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CET3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CEU3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CHM3055LAPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.