首页 >APT11N80BC3G>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
APT11N80BC3G | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SuperJunctionMOSFET | ADPOW Advanced Power Technology | ADPOW |
详细参数
- 型号:
APT11N80BC3G
- 功能描述:
MOSFET N-CH 800V 11A TO-247
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microchip Technology |
24+ |
TO-247 [B] |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
MICROCHIP |
22+ |
20000 |
原厂微芯渠道.全新原装! |
询价 | |||
Microsemi |
23+ |
MOSFET |
7750 |
全新原装优势 |
询价 | ||
APTMICROS |
2023+ |
TO-247B |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
Microsemi |
1942+ |
N/A |
98 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
1809+ |
TO-247 |
375 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
APT |
23+ |
TO-247B |
10000 |
公司只做原装正品 |
询价 | ||
Microsemi Corporation |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Microsemi Corporation |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
询价 | ||
Microchip |
21+ |
N/A |
15000 |
只做原装 |
询价 |
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