首页 >APT80GA60B>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
APT80GA60B | Power Semiconductors Power Modules RF Power MOSFETs POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
APT80GA60B | High Speed PT IGBT | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
APT80GA60B | Power Semiconductors Power Modules | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
APT80GA60B | 包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 143A 625W TO247 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | |
HighSpeedPTIGBT | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
产品属性
- 产品编号:
APT80GA60B
- 制造商:
Microchip Technology
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- IGBT 类型:
PT
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.5V @ 15V,47A
- 开关能量:
840µJ(开),751µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
23ns/158ns
- 测试条件:
400V,47A,4.7 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247 [B]
- 描述:
IGBT 600V 143A 625W TO247
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microsemi |
23+ |
IGBT |
7750 |
全新原装优势 |
询价 | ||
MICROSEMI |
638 |
原装正品 |
询价 | ||||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Microsemi |
1942+ |
N/A |
98 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
APTMICROSEMI |
23+ |
TO-247B |
10000 |
公司只做原装正品 |
询价 | ||
APT |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Microsemi Corporation |
22+ |
TO247 [B] |
9000 |
原厂渠道,现货配单 |
询价 | ||
Microsemi Corporation |
21+ |
TO247 [B] |
13880 |
公司只售原装,支持实单 |
询价 | ||
Microchip |
21+ |
15000 |
只做原装 |
询价 |
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