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ASRD740

GLASS PACKAGE STEP RECOVERY DIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: •TransitionTimeasLowas70pS •HermeticGlassPackage

ASI

Advanced Semiconductor

ASRD740B

GLASS PACKAGE STEP RECOVERY DIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: •TransitionTimeasLowas70pS •HermeticGlassPackage

ASI

Advanced Semiconductor

ASRD740T

GLASS PACKAGE STEP RECOVERY DIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: •TransitionTimeasLowas70pS •HermeticGlassPackage

ASI

Advanced Semiconductor

AZT740

HIGHCURRENTPHASECONTROL

POSEICO

Power Semiconductors

B740

10A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

BFP740

NPNSiliconGermaniumRFTransistor

ProductBrief TheBFP740isalinearverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.0VandcurrentsuptoIC=45

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740

NPNSiliconGermaniumRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740

LowNoiseSiliconGermaniumBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740

NPNTransistors

■Features ●HighgainultralownoiseRFtransistor ●Highmaximumstablegain ●Goldmetallizationforextrahighreliability ●150GHzfT-SiliconGermaniumtechnology ●OutstandingnoisefigureF=0.5dBat1.8GHz OutstandingnoisefigureF=0.85dBat6GHz

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

BFP740ESD

RobustHighPerformanceLowNoiseBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740ESD

RobustLowNoiseSiliconGermaniumBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740F

NPNSiliconGermaniumRFTransistor

NPNSiliconGermaniumRFTransistor •HighgainultralownoiseRFtransistor •Providesoutstandingperformancefor awiderangeofwirelessapplications upto10GHzandmore •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.5dBat1.8GHz Outstandingnoise

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740F

NPNSiliconGermaniumRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740F

LowNoiseSiliconGermaniumBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740F

NPNSiliconGermaniumRFTransist

NPNSiliconGermaniumRFTransistor •HighgainultralownoiseRFtransistor •Providesoutstandingperformancefor awiderangeofwirelessapplications upto10GHzandmore •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.5dBat1.8GHz Outstandingnoise

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740FESD

RobustHighPerformanceLowNoiseBipolarRFTransistor

ProductBrief TheBFP740FESDisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.2VandcurrentsuptoIC=45mA.

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP740FESD

RobustLowNoiseSiliconGermaniumBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BLV740

N-channelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海贝岭上海贝岭股份有限公司

BRUS740

ULTRA-FASTRECOVERYApproximately25AMPERESSINGLE-PHASE,FULL-WAVEBRIDGES

edi

Electronic devices inc.

BT740

EnhancedClass1Bluetoothv2.1Module

LSTD

Laird Tech Smart Technology

详细参数

  • 型号:

    ASRD740

  • 制造商:

    ASI

  • 制造商全称:

    ASI

  • 功能描述:

    GLASS PACKAGE STEP RECOVERY DIODE

供应商型号品牌批号封装库存备注价格
ASI
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
ASI
24+
NA
3500
原装现货,可开13%税票
询价
ASI
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
ASI
23+
SMD
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ASI
16+
NA
8800
原装现货,货真价优
询价
ASI
2020+
原厂封装
350000
100%进口原装正品公司现货库存
询价
更多ASRD740供应商 更新时间2024-11-22 15:00:00