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BB669

Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance)

SiliconTuningDiode Preliminarydata •ForVHF2-Band-hyperband-TV-tuners •Veryhighcapacitanceratio •Lowseriesresistance •ExtremelysmallplasticSMDpackage •Excellentuniformityandmatchingdueto in-linematchingassemblyprocedure

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BB669

Silicon Tuning Diode

SiliconTuningDiode •ForVHFTVtuners •Veryhighcapacitanceratio •Lowseriesresistance •Excellentuniformityandmatchingdueto in-linematchingassemblyprocedure •Pb-free(RoHScompliant)package

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BB669

Silicon Tuning Diode

SiliconTuningDiode •ForVHFTVtuners •Veryhighcapacitanceratio •Lowseriesresistance •Excellentuniformityandmatchingdueto in-linematchingassemblyprocedure •Pb-free(RoHScompliant)package

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BB669

Silicon Tuning Diode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BB669_07

Silicon Tuning Diode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BB669E7904HTSA1

包装:卷带(TR) 封装/外壳:SC-76,SOD-323 类别:分立半导体产品 二极管 - 可变电容(变容器,可变电抗器) 描述:DIODE VAR CAP 30V 20MA SOD-323

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCP669A

NPNEpitaxialPlanarTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

CSD669

PLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

CSD669A

PLASTICPOWERTRANSISTORS

CDIL

Continental Device India Limited

D669

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications

SAVANTIC

Savantic, Inc.

D669A

NPNTypePlasticEncapsulateTransistors

FEATURES PowerdissipationPCM:1mW(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

D669A

TO-126Plastic-EncapsulateTransistors

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

D669A

BIPOLARPOWERGENERALPURPOSETRANSISTOR

UTCUnisonic Technologies

友顺友顺科技股份有限公司

D669A

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

D669A

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications

SAVANTIC

Savantic, Inc.

D669A

SiliconNPNtransistorinaTO-252PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

D669A

SiliconNPNtransistorinaSOT-89PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

D669A

BIPOLARPOWERGENERALPURPOSETRANSISTOR

NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A

UTCUnisonic Technologies

友顺友顺科技股份有限公司

D669A

1.5A,180VNPNPlasticEncapsulatedTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

D669A

PlasticEncapsulateTransistors

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

详细参数

  • 型号:

    BB669

  • 制造商:

    Infineon Technologies AG

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
SOD323
3000
只做原厂渠道 可追溯货源
询价
Infineon/英飞凌
24+
SOD323
163000
一级代理保证进口原装正品现货假一罚十价格合理
询价
INFINEON/英飞凌
21+23+
SOD-323
3000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
Infineon
24+
SOD323
280
原装正品,假一罚十!
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON
23+
SOD323
7936
询价
INFINEON
24+
SOD-3230805
9000
新进库存/原装
询价
lnfineon
16+
原厂封装
408000
原装现货假一罚十
询价
INFINEON
2016+
SOD323
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
INFINEON
23+
SOD323
5000
原装正品,假一罚十
询价
更多BB669供应商 更新时间2024-11-26 16:36:00