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BC846BDW1T1G

Dual General Purpose Transistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixesforAutomotiveandOtherApplications Requiri

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC846BDW1T1G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC846BDW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC846BDW1T1

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETLE-Tech Electronics LTD

亚历电子亚历电子有限公司

BC846BDW1T1

DualGeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC846BDW1T1=1B BC847BDW1T1=1F BC848CDW1T1=1L Features •Pb−FreePackageisAvail

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC846BDW1T1

DualGeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC846BDW1T1D

DualGeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

LBC846BDW1T1

DualGeneralPurposeTransistorsNPNDuals

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBC846BDW1T1G

DualGeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.RoHSrequirements. WedeclarethatthematerialofproductcompliancewithandControlChangeRequirements;AEC-Q101Qualif

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SBC846BDW1T1G

DualGeneralPurposeTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SBC846BDW1T1G

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixesforAutomotiveandOtherApplications Requiri

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    BC846BDW1T1G

  • 功能描述:

    两极晶体管 - BJT 100mA 80V Dual NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON
22+
SOT-363
360000
深圳原装现货,支持实单
询价
ON/安森美
22+
SOT-363
360000
原装正品
询价
ON/安森美
21+
SOT-363
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
ON
15+
原厂原装
282000
进口原装现货假一赔十
询价
ON
18+
SOT363
9800
一级代理/全新原装现货/长期供应!
询价
ONSEMI
18+ROHS
NA
8000
全新原装!优势库存热卖中!
询价
SSCP
21+
SSCP
9852
只做原装正品假一赔十!正规渠道订货!
询价
ON
21+
SOT23
42000
询价
ON/安森美
21+
SOT363
9852
只做原装正品假一赔十!正规渠道订货!
询价
onsemi(安森美)
22+
SOT-363
2469
QQ询价 绝对原装正品
询价
更多BC846BDW1T1G供应商 更新时间2024-11-25 9:13:00