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BCR116S

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •BCR116S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR116S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116S

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116S

NPN Silicon Digital Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116S-E6327

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •BCR116S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR116S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116T

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116W

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BCR116W

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116W

NPNSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BCR116W

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •BCR116S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR116S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BD116

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BTS116

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BUL116

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BUL116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BULD116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BULT116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BYV116

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BYV116B

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

CDST116-G

SMDSwitchingDiode

Features -Lowleakagecurrentapplications. -Mediumspeedswitchingtimes.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDST116-G

SMDSwitchingDiode

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CM116

G-41/2MiniatureBayonetBase

G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase

CML

Chicago Miniature Lamp,inc

详细参数

  • 型号:

    BCR116S

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    Transistor Array NPN/NPN 4.7K 47K SOT363

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
标准封装
8967
原厂渠道供应,大量现货,原型号开票。
询价
INFINEON
SOT-363
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
Infineon/英飞凌
24+
SOT-363
163000
一级代理保证进口原装正品现货假一罚十价格合理
询价
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON/英飞凌
21+23+
SOT-363
3000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON
24+
SOT-363SOT-323-6
45400
新进库存/原装
询价
INFINEON
23+
SOT363
9365
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
AIT-IC
1742+
SOT23-5
98215
只要网上有绝对有货!只做原装正品!
询价
更多BCR116S供应商 更新时间2024-11-25 9:38:00