| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BCR116T | NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=4.7kΩ,R2=47kΩ) •BCR116S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR116S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
RectifierdiodesSchottkybarrier GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RectifierdiodesSchottkybarrier GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SMDSwitchingDiode Features -Lowleakagecurrentapplications. -Mediumspeedswitchingtimes. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDSwitchingDiode | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
G-41/2MiniatureBayonetBase G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase | CML Chicago Miniature Lamp,inc | CML | ||
Base | VCC Visual Communications Company | VCC | ||
AMPSFullbandDuplexer | APITECH API Technologies Corp | APITECH | ||
16-portRS-232/422/485PCIExpressboardswith4kVsurgeprotection | moxaMOXA 台湾摩莎摩莎科技（上海）有限公司 | moxa | ||
AllcapacitorsareX7Rmulti-layerceramic MilitaryCOTSDC/DCConverters TheMilQorseriesofMILCOTSDC/DCconvertersbringsSynQor’sfieldprovenhigh-efficiencysynchronousrectificationtechnologytotheMilitary/Aerospaceindustry.SynQor’sruggedizedencasedpackagingapproachensuressurvivabilityindemandingenvironments.Compa | SynQor SynQor Worldwide Headquarters | SynQor |
详细参数
- 型号：
BCR116T
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
NPN Silicon Digital Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
SOT-523 |
45000 |
热卖优势现货 |
询价 | ||
Infineon/英飞凌 |
2019+ |
SOT323 |
36000 |
原盒原包装 可BOM配套 |
询价 | ||
Infineon/英飞凌 |
24+ |
SOT323 |
163000 |
一级代理保证进口原装正品现货假一罚十价格合理 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
Infineon/英飞凌 |
1937+ |
SC75 |
9852 |
只做进口原装正品现货!或订货假一赔十! |
询价 | ||
YQ |
SOT-523 |
185600 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Infineon/英飞凌 |
23+ |
20000 |
全新、原装、现货 |
询价 | |||
INFINEON |
22+ |
SOT-523 |
8000 |
终端可免费供样,支持BOM配单 |
询价 | ||
INFINEON/英飞凌 |
21+ |
SOT323 |
10000 |
公司原装现货,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
22+ |
SOT323 |
20650 |
原装 |
询价 |
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