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BD246

Silicon PNP Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD249/A/B/C •125Wat25°Ccasetemperature •25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD246

isc Silicon PNP Power Transistor

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD249/A/B/C •125Wat25°Ccasetemperature •25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD246

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD246

PNP SILICON POWER TRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

TRSYS

Transys Electronics

BD246

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

BD246

PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS TheBD246seriesarePNPpowertransistorsinaTO3PNenvelope. Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD245,A,B,C CompliancetoRoHS.

COMSET

Comset Semiconductor

BD246

Silicon PNP Power Transistor

DESCRIPTION •CollectorCurrent-IC=-10A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-45V(Min)-BD246;-60V(Min)-BD246A -80V(Min)-BD246B;-100V(Min)-BD246C •ComplementtoTypeBD245/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD246

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

BD246A

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD246A

PNP SILICON POWER TRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

TRSYS

Transys Electronics

BD246A

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

BD246A

Silicon PNP Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD249/A/B/C •125Wat25°Ccasetemperature •25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD246A

PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

PNPSINGLE-DIFFUSEDMESASILICONPOWERTRANSISTORS TheBD246seriesarePNPpowertransistorsinaTO3PNenvelope. Theyarethepowertransistorsforpoweramplifierandhigh-speed-switchingapplications. ThecomplementaryisBD245,A,B,C CompliancetoRoHS.

COMSET

Comset Semiconductor

BD246A

isc Silicon PNP Power Transistor

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD249/A/B/C •125Wat25°Ccasetemperature •25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD246A

Silicon PNP Power Transistor

DESCRIPTION •CollectorCurrent-IC=-10A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-45V(Min)-BD246;-60V(Min)-BD246A -80V(Min)-BD246B;-100V(Min)-BD246C •ComplementtoTypeBD245/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD246B

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINN

Power Innovations Ltd

BD246B

PNP SILICON POWER TRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

TRSYS

Transys Electronics

BD246B

PNP SILICON POWER TRANSISTORS

●DesignedforComplementaryUsewiththeBD245Series ●80Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●15APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Electronic Solutions

伯恩斯伯恩斯(邦士)

BD246B

Silicon PNP Power Transistors

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD249/A/B/C •125Wat25°Ccasetemperature •25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

BD246B

isc Silicon PNP Power Transistor

DESCRIPTION •WithTO-3PNpackage •ComplementtotypeBD249/A/B/C •125Wat25°Ccasetemperature •25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

晶体管资料

  • 型号:

    BD246

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    45V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD214/45,BD250,BD258/45,TIP34,3CD10B,

  • 最大耗散功率:

    80W

  • 放大倍数:

  • 图片代号:

    B-62

  • vtest:

    45

  • htest:

    999900

  • atest:

    10

  • wtest:

    80

详细参数

  • 型号:

    BD246

  • 功能描述:

    两极晶体管 - BJT 80W PNP Silicon

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
24+
TO-3PN
10000
全新
询价
ON
16+
TO-3P
10000
全新原装现货
询价
ST
17+
TO-218
15000
原装现货热卖
询价
BOURNS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
N/A
21+
35200
一级代理/放心采购
询价
TOSHIBA/东芝
05+
TO-3P-3
16
就找我吧!--邀您体验愉快问购元件!
询价
TOS
22+
TO-3P-3
6000
十年配单,只做原装
询价
ATMEL
TO-3P
68900
原包原标签100%进口原装常备现货!
询价
ti
24+
500000
行业低价,代理渠道
询价
N/A
23+
原厂封装
5177
现货
询价
更多BD246供应商 更新时间2024-11-24 16:00:00