| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
LowCapacitanceESDprotectionarray | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
BandpassFilter | MINI Mini-Circuits | MINI | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelopeandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES •DirectinterfacetoC-MOS,TTL,etc. •High-speedswitch | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SIPMOS짰Small-Signal-Transistor SIPMOS®Small-Signal-Transistor Feature •n-channel •enhancementmode •Logiclevel •dv/dtrated •Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SIPMOSSmall-Signal-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
0.021A,600VSMALL-SIGNAL-TRANSISTOR DESCRIPTION TheUTCBSS127isanenhancementN-channelmodePowerFET,itusesUTC’sadvancedtechnologytoprovidecustomersultrahighswitchingspeedandultralowgatecharge. FEATURES *RDS(ON) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
LowInputCapacitance Description ThisnewgenerationusesadvancedplanartechnologyMOSFET,provideexcellenthighvoltageandfastswitching,makingitidealforsmall-signalandlevelshiftapplications. Features •LowInputCapacitance •HighBVDSSRatingforPowerApplication •LowInput/OutputLeakage •To | DIODES Diodes Incorporated | DIODES | ||
N-ChannelEnhancementModePowerMOSFET Description ThisnewgenerationusesadvancedplanartechnologyMOSFET, provideexcellenthighvoltageandfastswitching,makingitidealfor small-signalandlevelshiftapplications. Features LowInputCapacitance HighBVDSSRatingforPowerApplication LowInput/OutputLeakage Appl | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
Small-SignalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage | SEME-LAB Seme LAB | SEME-LAB | ||
GENERALPURPOSEPLASTICRECTIFIER Features ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 ●Constructionutilizesvoid-freemoldedplastictechnique ●Lowreverseleakage ●Lowforwardvoltagedrop ●Highcurrentcapability ●Highreliability ●Highsurgecurrentcapability | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
GENERALPURPOSEPLASTICRECTIFIER GENERALPURPOSEPLASTICRECTIFIER ReverseVoltage-1250to1800Volts ForwardCurrent-1.0Ampere FEATURES .TheplasticpackagecarriesUnderwritesLaboratory FlammabilityClassification94V-0 .Constructionutilizesvoid-freemoldedplastictechnique .Lowreverseleaka | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 | CHENYI | ||
SiliconRectifiers SiliconRectifiers •Nominalcurrent–Nennstrom1.5A •Repetitivepeakreversevoltage50…1000V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0 •Stand | Diotec Diotec Semiconductor | Diotec | ||
1.0AMPERESILICONRECTIFIERS SiliconRectifier1.0A Features •LowForwardVoltageDrop •HighCurrentCapability •HighReliability •HighSurgeCurrentCapability | TAITRON TAITRON Components Incorporated | TAITRON | ||
GENERALPURPOSESILICONRECTIFIER GENERALPURPOSESILICONRECTIFIER ReverseVoltage-1250to1300VoltsForwardCurrent-1.0Ampere FEATURES TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 Constructionutilizesvoid-freemoldedplastictechnique Lowreverseleakage Highf | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
GENERALPURPOSEPLASTICRECTIFIER GENERALPURPOSEPLASTICRECTIFIER ReverseVoltage-1250to1800Volts ForwardCurrent-1.0Ampere FEATURES .TheplasticpackagecarriesUnderwritesLaboratory FlammabilityClassification94V-0 .Constructionutilizesvoid-freemoldedplastictechnique .Lowreverseleakage .Lowforwar | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | PFS | ||
0.25TO0.5AMP.SILICONRECTIFIERS FEATURES *Lowcost *Lowleakage *Lowforwardvoltagedrop *Highcurrentcapability | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | JGD |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
电视 （TV）_中频放大 （ZF）_自动增益 （re）
- 封装形式：
特殊封装
- 极限工作电压：
- 最大电流允许值：
- 最大工作频率：
350MHZ
- 引脚数：
4
- 可代换的型号：
BF167,BF198,BF225,BF310,BF367,BF596,3DG112D,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
G-178
- vtest：
0
- htest：
350000000
- atest：
0
- wtest：
0
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOLYMIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
BYD优势 |
QFN |
2380 |
正品原装--自家现货-实单可谈 |
询价 | |||
BYD |
21+ |
10+ |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
BYD |
23+ |
QFN |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
BYD |
2048+ |
QFN32 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
BYD |
21+ |
QFN |
13162 |
原装现货假一赔十 |
询价 | ||
BYD |
22+ |
QFN |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
BYD |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
BYD |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
BYD |
2022 |
QFN |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |