BS170FTA资料datasheet下载库存现货翊欧-114ic电子网

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BS170FTA	文件：29.57 Kbytes Page：1 Pages	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES 60VoltVDS RDS(ON)=5Ω PARTMARKINGDETAIL–MV	DIODES Diodes Incorporated	DIODES
BS170FTA	文件：1.73234 Mbytes Page：8 Pages	N-Channel 60-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
BS170FTA	文件：956.5 Kbytes Page：6 Pages	N-Channel 60 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •L	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体	EVVOSEMI
BS170G	文件：52.79 Kbytes Page：4 Pages	SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170G	文件：57.97 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170G	文件：98.34 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60Volts SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170KL	文件：73.25 Kbytes Page：4 Pages	N-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •ESDProtected:2000V APPLICATIONS •DirectLogic-LevelInterface:TTL/CMOS •Solid-StateRelays •Drivers:Relays,Solenoids,Lamps,Hammers, Display,Memories,Transistors,etc. •BatteryOperatedSystems	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
BS170L	文件：25.36 Kbytes Page：2 Pages	N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.	Calogic Calogic, LLC	Calogic
BS170P	文件：22.09 Kbytes Page：1 Pages	N-CHANNELENHANCEMENTMODEVERTICALDMOSFET	Zetex Zetex Semiconductors	Zetex
BS170P	文件：626.5 Kbytes Page：6 Pages	60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability	DIODES Diodes Incorporated	DIODES
BS170PSTZ	文件：626.5 Kbytes Page：6 Pages	60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability	DIODES Diodes Incorporated	DIODES
BS170RLRA	文件：52.79 Kbytes Page：4 Pages	SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRA	文件：57.97 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRAG	文件：57.97 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRAG	文件：98.34 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60Volts SmallSignalMOSFET500mA,60Volts N−ChannelTO−92(TO−226) Features •Pb−FreePackageisAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRM	文件：52.79 Kbytes Page：4 Pages	SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRM	文件：57.97 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRMG	文件：57.97 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRP	文件：52.79 Kbytes Page：4 Pages	SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BS170RLRP	文件：57.97 Kbytes Page：4 Pages	SmallSignalMOSFET500mA,60VoltsN?묬hannelTO??2(TO??26)	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

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详细参数

型号：
BS170FTA
功能描述：
MOSFET N-Chnl 60V
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BS170FTA	ZETEX	24+	SOT-23	45000	热卖优势现货	询价
深圳诚思涵科技有限公司	BS170FTA	ZETEX	16+	SOT-23	6500	进口原装现货/价格优势!	询价
深圳市龙瀚电子有限公司	BS170FTA	DIODES	16+	SOP	30000	原装正品供应B	询价
瀚佳科技(深圳)有限公司	BS170FTA	ZETEX	16+	SOT23	8900	全新原装现货,假一罚十	询价
深圳市金华微盛电子有限公司	BS170FTA	DIODES/美台	2019+	SOT23	78550	原厂渠道可含税出货	询价
深圳市航润创能电子集团有限公司	BS170FTA	DIODES/美台	21+	SOT-23-3	16424	只做原装,假一罚十	询价
深圳市明嘉莱科技有限公司	BS170FTA	DIODES/美台	23+	SOT-23	918000	明嘉莱只做原装正品现货	询价
深圳市美思瑞电子科技有限公司	BS170FTA	UMW 友台	23+	SOT-23	10000	原装正品，实单请联系	询价
深圳市河锋鑫科技有限公司	BS170FTA	ZETEX	2019+PB	SOT-23	6500	原装正品可含税交易	询价
深圳市高捷芯城科技有限公司	BS170FTA	DIODES(美台)	23+	SOT-23	9908	支持大陆交货,美金交易。原装现货库存。	询价

更多BS170FTA供应商更新时间2024-11-20 18:22:00

详细参数

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