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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB07N65SA	文件：544.5 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED07N65A	文件：628.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED07N65LN	文件：507.84 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED07N65SA	文件：536.62 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF07N65	文件：416.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CEF07N65A	文件：822.56 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF07N65LN	文件：518.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF07N65SA	文件：544.5 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP07N65	文件：416.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CEP07N65	文件：1.68263 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP07N65A	文件：1.80142 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP07N65A	文件：336.06 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CEP07N65A	文件：822.56 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP07N65LN	文件：518.57 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP07N65SA	文件：544.5 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU07N65A	文件：1.5612 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU07N65A	文件：642.77 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,6A,RDS(ON)=1.45Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 华瑞华瑞股份有限公司	CET
CEU07N65A	文件：628.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU07N65LN	文件：507.84 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU07N65SA	文件：536.62 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市国宇半导体科技有限公司	CEB07N7	CET/華瑞	23+	TO-263	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	CEB07N7	CET	TO-263	22+	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	CEB07N7	CET	23+	TO-263	6000	原装正品，支持实单	询价
深圳市创新迹电子有限公司	CEB07N7	CET/華瑞	2022+	TO-263	30000	进口原装现货供应,原装假一罚十	询价
深圳市宏捷佳电子科技有限公司	CEB07N7	CET	24+	TO-263	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市一线半导体有限公司	CEB07N8A	CET	24+		50000		询价
深圳市宇集芯电子有限公司	CEB09N6	CET	24+	TO-263	90000	进口原装现货假一罚十价格合理	询价
瀚佳科技(深圳)有限公司	CEB09N6	CET	2020+	TO-263	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市威尔健半导体有限公司	CEB09N6	INFINEON/英飞凌	23+	TO-220	69820	终端可以免费供样,支持BOM配单!	询价
深圳市永贝尔科技有限公司	CEB09N6	CET	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价

更多CEB07N65SA供应商更新时间2024-11-22 14:30:00

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