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CEB35P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB35P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEF35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

TCH35P10ROJE

VeryLowInductanceDesign

OHMITEOHMITE MANUFACTURING COMPANY

欧敏欧敏电阻制造公司

TCH35P10ROJE

35WattTO220PackageThickFilmPower

OHMITEOHMITE MANUFACTURING COMPANY

欧敏欧敏电阻制造公司

详细参数

  • 型号:

    CEB35P10

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    P-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET/華瑞
24+
TO-263
156753
明嘉莱只做原装正品现货
询价
CET
23+
TO-263
8650
受权代理!全新原装现货特价热卖!
询价
CET
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
询价
CET/華瑞
23+
TO-263
10000
公司只做原装正品
询价
CET/華瑞
23+
TO-263
50000
全新原装正品现货,支持订货
询价
CET/華瑞
2022
TO-263
80000
原装现货,OEM渠道,欢迎咨询
询价
CET/華瑞
2022+
TO-263
28
原厂代理 终端免费提供样品
询价
CET
TO-263
68900
原包原标签100%进口原装常备现货!
询价
CET
23+
TO-263
6000
原装正品,支持实单
询价
CET/華瑞
23+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多CEB35P10供应商 更新时间2024-11-22 17:07:00