零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
CED6060R | N-Channel Logic Level Enhancement Mode Field Effect Transistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | |
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,52.4A,RDS(ON)=21mW@VGS=10V. RDS(ON)=25mW@VGS=5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●60V,60A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=25mΩ@VGS=5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,42A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,42A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor
| CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,48A,RDS(ON)=24mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=29mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,34A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. TO-251&TO-252package. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT30Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
Ultra-fastswitching | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
230VIP20595x59523W/33WCCTAdjustableTrofferPanel DESCRIPTION230VIP20595x59523W/33WCCTAdjustableTrofferPanel | KNIGHTSBRIDGE ML Accessories Limited. | KNIGHTSBRIDGE | ||
230VIP20595x59523W/33WCCTAdjustableTrofferPanelSTEmergency DESCRIPTION 230VIP20595x59523W/33WCCTAdjustableTrofferPanelST Emergency | KNIGHTSBRIDGE ML Accessories Limited. | KNIGHTSBRIDGE | ||
60AmpHighVoltageSCHOTTKYBARRIERRECTIFIERSMechanicalDimensions Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0 | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI |
详细参数
- 型号:
CED6060R
- 制造商:
CET
- 制造商全称:
Chino-Excel Technology
- 功能描述:
N-Channel Logic Level Enhancement Mode Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SR |
23+ |
TO-251 |
5000 |
原装正品,假一罚十 |
询价 | ||
CET |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
CET |
18+ |
TO-251 |
41200 |
原装正品,现货特价 |
询价 | ||
CET |
2020+ |
TO-251 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
C |
23+ |
TO-251 |
10000 |
公司只做原装正品 |
询价 | ||
台产 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
C |
22+ |
TO-251 |
6000 |
十年配单,只做原装 |
询价 | ||
台湾产 |
TO-251 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
C |
23+ |
TO-251 |
6000 |
原装正品,支持实单 |
询价 |
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