| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CEF80N15 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | |
CEF80N15 | N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
150VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247 N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas | IXYS IXYS Corporation | IXYS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS | ||
N-ChannelAdvancedPowerMOSFET | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 | RUICHIPS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
22+23+ |
TO-220F |
22679 |
绝对原装正品全新进口深圳现货 |
询价 | ||
CET |
19+ |
TO-220F |
9860 |
一级代理 |
询价 | ||
CET |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
CET |
21+ |
TO-220F |
6000 |
原装现货假一赔十 |
询价 | ||
CET |
22+ |
TO-220F |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
CET/華瑞 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
CET/華瑞 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CET/華瑞 |
2022+ |
TO-220F |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
CET |
23+ |
TO-220F |
6000 |
原装正品，支持实单 |
询价 | ||
CET |
17+ |
TO-220F |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
相关规格书
更多- CEF80N75
- CEF830G
- CEF840A
- CEF840G
- CEF840L
- CEF85N75
- CEF9060N
- CEF9060R
- CEFA101
- CEFA101-G
- CEFA102
- CEFA102-G
- CEFA103-G
- CEFA104
- CEFA104-G
- CEFA105-G
- CEFA201
- CEFA201-G
- CEFA202
- CEFA202-G
- CEFA203-G
- CEFB101
- CEFB101-G
- CEFB102
- CEFB102-G
- CEFB103-G
- CEFB104
- CEFB104-G
- CEFB105-G
- CEFB201
- CEFB201-G
- CEFB202
- CEFB202-G
- CEFB203-G
- CEFB204
- CEFB204-G
- CEFB205-G
- CEFC301
- CEFC301-G
- CEFC302
- CEFC302-G
- CEFC303-G
- CEFC304
- CEFC304-G
- CEFC305-G
相关库存
更多- CEF830G
- CEF840A
- CEF840B
- CEF840G
- CEF85N75
- CEF860LT-G
- CEF9060N
- CEF90N15
- CEFA101-G
- CEFA101-G_12
- CEFA102-G
- CEFA103
- CEFA103-G
- CEFA104-G
- CEFA105
- CEFA105-G
- CEFA201-G
- CEFA201-G_12
- CEFA202-G
- CEFA203
- CEFA203-G
- CEFB101-G
- CEFB101-G_12
- CEFB102-G
- CEFB103
- CEFB103-G
- CEFB104-G
- CEFB105
- CEFB105-G
- CEFB201-G
- CEFB201-G_12
- CEFB202-G
- CEFB203
- CEFB203-G
- CEFB204-G
- CEFB205
- CEFB205-G
- CEFC301-G
- CEFC301-G_12
- CEFC302-G
- CEFC303
- CEFC303-G
- CEFC304-G
- CEFC305
- CEFC305-G