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CEK02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V,0.4A,RDS(ON)=6.75W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N7

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB02N7G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEB02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED02N7

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■700V,1.6A,RDS(ON)=6.6Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF02N7

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEF02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF02N7G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEI02N7

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP02N7

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP02N7G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU02N7

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■700V,1.6A,RDS(ON)=6.6Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU02N7G

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半导体有限公司

CEU02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CHM02N7NPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE700VoltsCURRENT1.9Ampere FEATURE *Smallflatpackage.(D2PAK) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM02N7PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE700VoltsCURRENT1.6Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

供应商型号品牌批号封装库存备注价格
曰本
2016+
ZIP9
6523
只做原装正品现货!或订货!
询价
DUBILIER
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
DUBILIER
21+
35200
一级代理/放心采购
询价
DUB
23+
12790
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SOC
24+
SMD-2
68900
一站配齐 原盒原包现货 朱S Q2355605126
询价
DUB
1535+
9000
询价
DUB
23+
9000
全新原装,欢迎来电咨询
询价
DUBILIER
1250
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
TAIYO/太诱
2022+
SMD
15000
原厂代理 终端免费提供样品
询价
TAIYO/太诱
23+
SMD
6800
专注配单,只做原装进口现货
询价
更多CEK02N7G供应商 更新时间2024-11-22 9:02:00