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CEP20N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,28A,RDS(ON)=40mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP20N06_10

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU20N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

CHM20N06PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT20Ampere FEATURE ​​​​​​​*Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CJU20N06

N-ChannelPowerMOSFET

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

CJU20N06

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半导体有限公司

CMD20N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

D20N06E

20Amps,55VoltsN-CHANNELPowerMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

EMB20N06E

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FQB20N06

60VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB20N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD20N06

60VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD20N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FQD20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16.8A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.063Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQD20N06

60VN-ChannelMOSFET

VDS60V ID(atVGS=10V)30A RDS(ON)(atVGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

FQD20N06

60VN-ChannelMOSFET

GeneralDescription ThisadvancedMOSFETtechnologyhasbeenespecially tailoredtoreduceon-stateresistance,andtoprovide superiorswitchingperformanceandhighavalancheenergy strength.Thesedevicesaresuitableforswitchedmode powersupplies,audioamplifier,DCmotorcontrol,and

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

FQD20N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD20N06LE

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    CEP20N06

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
2022
TO220/3
2058
原厂原装正品,价格超越代理
询价
CET
24+
TO2203
648
询价
CET
23+
TO-220
5000
原装正品,假一罚十
询价
VBsemi
2020+
TO220AB
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
CET
21+
TO-220
35200
一级代理/放心采购
询价
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
CET
21+
TO-220
12001
原装现货假一赔十
询价
CET
22+
TO-220
32350
原装正品 假一罚十 公司现货
询价
C
23+
TO220AB
10000
公司只做原装正品
询价
更多CEP20N06供应商 更新时间2024-11-22 8:54:00