| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CEU6601 | P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | |
CEU6601 | P-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT4.3Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOchenmko 力勤股份有限公司 | CHENMKO | ||
P-channelandN-channelComplementaryMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-channelandP-channelComplementaryMOSFETS | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
NandP-ChannelEnhancementModePowerMOSFET ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ) | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
CalibrationandAdjustmentSoftwareforAgilentRF/WInstruments | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
Lithium-ionbatterycharginganddischargingswitch Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
N-ChannelPowerMOSFET Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET Features •2.5Vdrive •Protectiondiodein •Common-draintype •Halogenfreecompliance •2KVESDHBM | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
USBDedicatedChargingPortControllerforFastChargingProtocolandQC2.0/3.0 | FITIPOWERFitipower Integrated Technology Inc. 天鈺科技天鈺科技股份有限公司 | FITIPOWER | ||
P-channelandN-channelComplementaryMOSFETS | FS First Silicon Co., Ltd | FS | ||
Synchronous-RectifiedBuckMOSFETDrivers | Intersil Intersil Corporation | Intersil | ||
Synchronous-RectifiedBuckMOSFETDrivers Synchronous-RectifiedBuckMOSFETDrivers TheHIP6601andHIP6603arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopower N-ChannelMOSFETsinasynchronous-rectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP630xMulti-PhaseBuckPWMcontrollera | Intersil Intersil Corporation | Intersil | ||
Synchronous-RectifiedBuckMOSFETDrivers Features •DrivesTwoN-ChannelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevice •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small8LeadSOICPackage •DualGate-DriveVoltagesforOptimalEfficiency •Three-StateInputfo | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SynchronousRectifiedBuckMOSFETDrivers TheHIP6601A,HIP6603AandHIP6604arehighfrequency,dualMOSFETdriversspecificallydesignedtodrivetwopowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxoranISL65xxMulti-PhaseBuckPWMcontrollerformacompletecore-voltage | Intersil Intersil Corporation | Intersil | ||
SynchronousRectifiedBuckMOSFETDrivers Features •DrivesTwoN-ChannelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevice •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small8LeadSOICandEPSOICand16LeadQFN Packages •DualGate-DriveVoltagesforOptimalEffic | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
CEU6601
- 制造商：
CET
- 制造商全称：
Chino-Excel Technology
- 功能描述：
P-Channel Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
TO-252 |
2160 |
只做原厂渠道 可追溯货源 |
询价 | ||
CET/華瑞 |
24+ |
TO-252 |
499574 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
CET/華瑞 |
23+ |
TO-252 |
360000 |
专业供应MOS/LDO/晶体管/有大量价格低 |
询价 | ||
SR |
23+ |
TO-252-2 |
5000 |
原装正品,假一罚十 |
询价 | ||
CET |
24+ |
TO252 |
5000 |
全现原装公司现货 |
询价 | ||
CET |
19+ |
TO-252 |
67813 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
CET |
23+ |
TO-252 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
CET |
20+ |
TO-252 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
CET |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
CET |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
询价 |
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