首页 >DMG6602SVT>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
DMG6602SVT | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | |
DMG6602SVT | N- and P-Channel V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | DIODES Diodes Incorporated | DIODES | ||
N-ChannelPowerMOSFET12V,18A,5.9m廓,DualEFCP N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Lithium-ionbatterycharginganddischargingswitch N-ChannelSiliconMOSFETLithium-ionbatterycharginganddischargingswitch Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
PowerMOSFET N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET12V,18A,5.9m廓,DualEFCP N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighlyIntegratedGreen-ModePWMController | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-channelandN-channelComplementaryMOSFETS | FS First Silicon Co., Ltd | FS | ||
DualChannelSynchronous-RectifiedBuckMOSFETDriver TheHIP6602isahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronous-rectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxseriesofMulti-PhaseBuckPWMcontrollerandIntersil’sUltraFETs®formacomplete | Intersil Intersil Corporation | Intersil | ||
DualChannelSynchronous-RectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •5Vto12VGate-DriveVoltagesforOptimalEfficiency •Three-State | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage. | Intersil Intersil Corporation | Intersil | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage. | Intersil Intersil Corporation | Intersil |
详细参数
- 型号:
DMG6602SVT
- 制造商:
Diodes Incorporated
- 功能描述:
MOSFET NP CH COM PAIR 30V TSOT23
- 功能描述:
MOSFET, NP CH, COM PAIR, 30V, TSOT23
- 功能描述:
MOSFET, NP CH, COM PAIR, 30V, TSOT23; Transistor
- Polarity:
N and P Channel; Continuous Drain Current
- Id:
3.4A; Drain Source Voltage
- Vds:
30V; On Resistance
- Rds(on):
0.038ohm; Rds(on) Test Voltage
- Vgs:
10V; Power Dissipation
- Pd:
1.12W ;RoHS
- Compliant:
Yes
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
SOT23-6 |
69000 |
全新原装现货热卖/代理品牌/可申请样品和规格书 |
询价 | ||
Z |
23+ |
SOT-23- |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
DIODES |
13 |
SOT23-6 |
6000 |
绝对原装自己现货 |
询价 | ||
DIODES/美台 |
22+ |
TSOT26 |
90000 |
正规代理渠道假一赔十 |
询价 | ||
Z |
2020+ |
SOT-23- |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
DIODES/美台 |
2021+ |
SOT26 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VBsemi/台湾微碧 |
21+ |
SOT-23-6 |
10001 |
原装现货假一赔十 |
询价 | ||
VBsemi/台湾微碧 |
22+ |
SOT-23-6 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
DIODES/美台 |
23+ |
TSOT26 |
12000 |
原装正品假一罚百!可开增票! |
询价 |
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