零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
256MbitsSDRAMBareChip | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
256MbitsSDRAMBareChip | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
256MbitsSDRAMBareChip | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
SMDCLOCKOSCILLATOR | ECS ECS, Inc. | ECS | ||
256MbitsSDRAMBareChip | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
SMDVCXO | ECS ECS, Inc. | ECS | ||
256MbitsDDRMobileRAM??WTR(WideTemperatureRange) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
256MbitsSDRAM(8Mwordsx32bits) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
256MbitsSDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
256MbitsSDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
256MbitsSDRAMWTR(WideTemperatureRange) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
N-ChannelPowerTrenchMOSFET150V,79A,16m? Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=33A •Qg(tot)=86nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Formerlydevelopmentaltype82884 Applications •DC/DCconve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=79A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrenchMOSFET150V,79A,16m? Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=33A •Qg(tot)=86nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Formerlydevelopmentaltype82884 Applications •DC/DCconve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=79A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrenchMOSFET150V,79A,16m? Features •rDS(ON)=14mΩ(Typ.),VGS=10V,ID=33A •Qg(tot)=86nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Formerlydevelopmentaltype82884 Applications •DC/DCconve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FerriteCores | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
POWERGENERATIONStepRecoveryDiodes | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
EightCharacter5mmSmartAlphanumericDisplay Description TheHDSP-253xisidealforapplicationswheredisplayingeightormorecharactersofdotmatrixinformationinanaestheticallypleasingmannerisrequired.Thesedevicesareeightdigit,5x7dotmatrix,alphanumericdisplays.The5.0mm(0.2inch)highcharactersarepackagedina0 | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP |
替换型号
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SYL |
23+ |
442 |
询价 | ||||
ECG |
TO-92 |
10 |
原装现货 实单可谈 |
询价 | |||
N/A |
23+ |
TO220 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ECG |
23+ |
原包装 |
8890 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
YUNXING |
24+ |
con |
100 |
现货常备产品原装可到京北通宇商城查价格https://www.jbchip.com/index |
询价 | ||
YUNXING |
30 |
询价 | |||||
YUNXING |
24+ |
con |
30 |
现货常备产品原装可到京北通宇商城查价格https://www.jbchip.com/index |
询价 |
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