| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FTK12N65P | 12 Amps, 650 Volts N-CHANNEL MOSFET | FS First Silicon Co., Ltd | FS | |
FTK12N65P | 12 Amps, 650 Volts N-CHANNEL MOSFET | FS First Silicon Co., Ltd | FS | |
12 Amps, 650 Volts N-CHANNEL MOSFET | FS First Silicon Co., Ltd | FS | ||
N-ChannelPowerMOSFET(650V,12A) Features •H12N65SeriesisaHighvoltageNChannelenhancementmodepowerMOSFETchipfabricatedinadvancedsiliconepitaxialplanartechnology •Advancedterminationschemetoprovideenhancedvoltageblockingcapability •AvalancheEnergySpecified •SourcetoDrainDiodeRecoveryTimeComp | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
650VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
650VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
650VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
650VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
650VN-ChannelPlanarMOSFET Features RDSON≤0.8Ω@Vgs=10V,Id=6A ⚫UltraLowgateCharge(typicaltypical42nC) ⚫LowCrss(typicaltypical4.6pF) ⚫Fastswitchingcapability ⚫100avalanchetested ⚫Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply( PowerFacto | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤0.8Ω@Vgs=10V,Id=6A ⚫UltraLowgateCharge(typicaltypical42nC) ⚫LowCrss(typicaltypical4.6pF) ⚫Fastswitchingcapability ⚫100avalanchetested ⚫Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply( PowerFacto | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤0.8Ω@Vgs=10V,Id=6A ⚫UltraLowgateCharge(typicaltypical42nC) ⚫LowCrss(typicaltypical4.6pF) ⚫Fastswitchingcapability ⚫100avalanchetested ⚫Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply( PowerFacto | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤0.8Ω@Vgs=10V,Id=6A ⚫UltraLowgateCharge(typicaltypical42nC) ⚫LowCrss(typicaltypical4.6pF) ⚫Fastswitchingcapability ⚫100avalanchetested ⚫Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply( PowerFacto | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650VN-ChannelPlanarMOSFET Features RDSON≤0.8Ω@Vgs=10V,Id=6A ⚫UltraLowgateCharge(typicaltypical42nC) ⚫LowCrss(typicaltypical4.6pF) ⚫Fastswitchingcapability ⚫100avalanchetested ⚫Improveddv/dtcapability Applications SwitchModePowerSupply( UninterruptiblePowerSupply( PowerFacto | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY | ||
650V/12AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
650V/12AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
12A650VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
12A650VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FS |
23+ |
SOT-23 |
63000 |
原装正品现货 |
询价 | ||
FS |
23+ |
12000 |
询价 | ||||
FIRSTSILICON |
24+ |
ROHS |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
FIRSTSILICON |
22+ |
SOT-323 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
FIRSTSILICON |
2022+ |
2000 |
全新原装 货期两周 |
询价 | |||
FS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FIRST/福斯特 |
23+ |
TO252 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Nippon |
90 |
公司优势库存 热卖中!! |
询价 | ||||
FIRSTSILICON |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
询价 |
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