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FTP12N06N

N-Channel Enhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

IXTU12N06T

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTU12N06T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTY12N06T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTY12N06T

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

MTM12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP12N06

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

Motorola

Motorola, Inc

MTP12N06EZL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

Motorola

Motorola, Inc

RFD12N06

60VN-ChannelMOSFET

Features •UltraLowOn-Resistance -RDS(ON)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

RFD12N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06RLE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

供应商型号品牌批号封装库存备注价格
IPS
23+
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IPS
2023+
TO-220
20000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
IPS
2048+
TO-220
9851
只做原装正品现货!或订货假一赔十!
询价
I
23+
TO-220
10000
公司只做原装正品
询价
I
TO-220
22+
6000
十年配单,只做原装
询价
IPS
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
询价
I
24+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
PANASONIC
20+
传感器
396
就找我吧!--邀您体验愉快问购元件!
询价
PANASONIC
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
方舟微
23+
TO-220-3L
25800
方舟微替代国产系列出售
询价
更多FTP12N06N供应商 更新时间2024-11-22 15:30:00