FCX1149

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)67mΩat3A

FCX1149A

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)67mΩat3A

FCX1149A

PNP Silicon Power Switching Transistor

Features ●2Wpowerdissipation. ●20Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.45mvTyp. ●Extremelylowequivalenton-resistance. RCE(sat)67mΩat3A.

FCX1149A

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

Features •BVCEO=-25V •IC=-3AContinuousCurrent •ICM=-10APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FCX1149A

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance; RCE(sat)67mΩat3A

FCX1149ATA

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance; RCE(sat)67mΩat3A

FCX1149A_15

SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

FCX1149ATA

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-243AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 25V 3A SOT89-3

FZT1149A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FEATURES *VCEO=-25V *4AmpContinuousCurrent *10AmpPulseCurrent *LowSaturationvoltage *HighGain

FZT1149A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FeaturesandBenefits •BVCEO>-25V •MaximumContinuousCurrentIC=-4A •PeakPulseCurrentIC=-10A •HighGainHoldsUphFE>195@IC=-2A •VeryLowEquivalentOn-Resistance;RCE(sat)=130mΩat-2A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“

FZT1149A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FeaturesandBenefits •BVCEO>-25V •MaximumContinuousCurrentIC=-4A •PeakPulseCurrentIC=-10A •HighGainHoldsUphFE>195@IC=-2A •VeryLowEquivalentOn-Resistance;RCE(sat)=130mΩat-2A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“

FZT1149ATA

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FeaturesandBenefits •BVCEO>-25V •MaximumContinuousCurrentIC=-4A •PeakPulseCurrentIC=-10A •HighGainHoldsUphFE>195@IC=-2A •VeryLowEquivalentOn-Resistance;RCE(sat)=130mΩat-2A •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“

HFA1149

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features •Wide-3dBBandwidth(AV=+2).............450MHz •GainFlatness(To250MHz)...................0.8dB •VeryFastSlewRate(AV=+2).............1100V/s •HighInputImpedance......................1.7M •Diff

HFA1149

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features •Wide-3dBBandwidth(AV=+2).............450MHz •GainFlatness(To250MHz)...................0.8dB •VeryFastSlewRate(AV=+2)..............1100V/µs •HighInputImpedance......................1.7MΩ •Di

HFA1149EVAL

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features •Wide-3dBBandwidth(AV=+2).............450MHz •GainFlatness(To250MHz)...................0.8dB •VeryFastSlewRate(AV=+2)..............1100V/µs •HighInputImpedance......................1.7MΩ •Di

HFA1149IB

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features •Wide-3dBBandwidth(AV=+2).............450MHz •GainFlatness(To250MHz)...................0.8dB •VeryFastSlewRate(AV=+2)..............1100V/µs •HighInputImpedance......................1.7MΩ •Di

HFA1149IB

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

HFA1149IB

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features •Wide-3dBBandwidth(AV=+2).............450MHz •GainFlatness(To250MHz)...................0.8dB •VeryFastSlewRate(AV=+2).............1100V/s •HighInputImpedance......................1.7M •Diff

ISF1149

N-ChannelSuper-JMOSFET

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=65mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

K1149

5VCrystalClockOscillators

4-pinPackage,Compatiblewith14-pinDIL 40to160MHzFrequencyRange(DiscreteHigherFrequenciesAvailable DesignedtoDriveStandardECL10Kand10KHFamilies ECLandPECLOptionsAvailable DualComplementaryOutputAvailable 50ΩDriveCapability Internal470WOutputPull-Dow