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FDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030L

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP6030

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6030BL

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDU6030BL

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

GPR-6030D

180WATTLINEAR

POWERBOX

Powerbox manufactures

H6030NL

SMTCOMMONMODECHOKES

pulse

Pulse A Technitrol Company

HT6030

312SeriesofDecoders

GeneralDescription The312decodersareaseriesofCMOSLSIsforremotecontrolsystemapplications.Theyarepairedwith312seriesofencoders.Forproperoperationapairofencoder/decoderwiththesamenumberofaddressanddataformatshouldbeselected(refertotheencoder/decodercrossr

HoltekHolmate Technology Corp. (Holtek)

合泰

HUR6030

High-PerformanceWideTemperatureRangeUltraFastRecoveryEpitaxialDiode

FEATURES *Internationalstandardpackage *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Antiparalleldiodeforhighfrequencyswitchingdevices *Antisaturationdiode *Snubberdiode *Free

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

详细参数

  • 型号:

    FDB6030L

  • 功能描述:

    MOSFET N-Channel PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO-263
3644
只做原厂渠道 可追溯货源
询价
onsemi(安森美)
23+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD/仙童
2405+
TO-263
4475
只做原装正品渠道订货
询价
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
询价
FAIRCHILD
2022
TO263
2058
原厂原装正品,价格超越代理
询价
24+
TO-263
5000
询价
FSC
23+
TO-263
9526
询价
FSC
2020+
TO263
378
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAI
23+
TO263
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
FSC
2016+
TO-263
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多FDB6030L供应商 更新时间2024-11-20 16:36:00