零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Advanced N-Ch Power MOSFET-G | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
FM10N6010Amps600VoltageN-ChannelPOWERMOSFET | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
N-CHANNELSILICONPOWERMOSFETFeatures | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.73Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET | TGS Tiger Electronic Co.,Ltd | TGS | ||
600VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformanc | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.73Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
600VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FIRST(福斯特) |
2112+ |
TO-220F(TO-220IS) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
FIRST/福斯特 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
FIRST/福斯特 |
2022+ |
TO-220F |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
FIRST福斯特 |
23+ |
TO-220F(TO-220IS) |
22820 |
原装正品,支持实单 |
询价 | ||
sino |
2023+ |
TO-220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FIRST/福斯特 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
FIRST(福斯特) |
20+ |
TO-220IS |
50 |
询价 | |||
FIRST/福斯特 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
FIRST(福斯特) |
23+ |
TO220IS |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
相关规格书
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相关库存
更多- FIR10N65FG
- FIR10N80ANG
- FIR10NP04DG
- FIR110N082PG
- FIR110N10PG
- FIR110N15PG
- FIR11N40FG
- FIR11NS60AFG
- FIR11NS65AFG
- FIR11NS65ALG
- FIR11NS65APG
- FIR120N055PG
- FIR120N06PG
- FIR120N08PG
- FIR12N06PG
- FIR12N15LG
- FIR12N65FG
- FIR140N075PG
- FIR140N098PG
- FIR140N10ANFG
- FIR140N10RG
- FIR14N10DG
- FIR14N50ANG
- FIR14N65FG
- FIR150N06PG
- FIR150N08PG
- FIR150N15ANFG
- FIR160N10PG
- FIR16N50FG
- FIR170N075PG
- FIR170N10RG
- FIR180N10PG
- FIR18N20PG
- FIR18N50FG
- FIR190N085PG
- FIR19N20PG
- FIR1N60ALG
- FIR20N15PG
- FIR20N50ANG
- FIR20N60AFG
- FIR20N65AFG
- FIR210N03PG
- FIR210N06PG
- FIR210N075TG
- FIR210N085PG