| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FMI16N50E | N-CHANNEL SILICON POWER MOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | |
N-CHANNEL SILICON POWER MOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
OptimizedSwitchforDiscontinuousCurrentModePowerFactorCorrection | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=16A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET Features •16A,500V,RDS(on)=0.32Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical35pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET 500VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LowGateChargeQgResultsinSimpleDriveRequirement | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SMPSMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
LowGateChargeQgResultsinSimpleDriveRequirement | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarHVHiperFETPowerMOSFET PolarHV™HiperFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •S | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
FMI16N50E
- 制造商：
FUJI
- 制造商全称：
Fuji Electric
- 功能描述：
N-CHANNEL SILICON POWER MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
F |
23+ |
T-PACK(L) |
10000 |
公司只做原装正品 |
询价 | ||
F |
22+ |
T-PACK(L) |
6000 |
十年配单,只做原装 |
询价 | ||
FUJI |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
F |
22+ |
T-PACK(L) |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
FUJI/富士电机 |
23+ |
N/A |
11550 |
FUJI/富士电机系列在售 |
询价 | ||
FUJI/富士电机 |
23+ |
N/A |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
FUJI/富士电机 |
23+ |
TO262 |
125810 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
246 |
现货供应 |
询价 |
相关规格书
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- FMI16N60ES
- FMI20N50ES
- FMINI-GB-134
- FMJ-2303
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相关库存
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- FMK2
- FMK2G
- FMK2G-15S-3360
- FMK2G-K670
- FMK2GL-K201
- FMK3
- FMK3G-25P-3360
- FMK3G-K201
- FMK3-K368
- FMK4G
- FMK4G-37S-3360
- FMK5G
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- FMK5GL
- FMK5-K201
- FMKA130
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- FMKG-A1053
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- FML0240L
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- FML0540L
- FML0H333ZF
- FML10
- FML-12
- FML120B
- FML12N60ES
- FML-12S
- FML130