FODM181AR2中文资料安森美半导体数据手册PDF规格书

The FODM181 series consist of a gallium arsenide infrared emitting

diode driving a phototransistor. It built in a compact, half−pitch,

mini−flat, 4−pin package. The lead pitch is 2.54 mm.

Features

• Current Transfer Ratio Ranges from 20 to 600

• at IF = 5 mA, VCE = 5 V, TA = 25°C

♦ FODM181A − 80 to 160

♦ FODM181B − 130 to 260

♦ FODM181C − 200 to 400

♦ FODM181D − 300 to 600

• Safety and Regulatory Approvals:

♦ UL1577, 3750 VACRMS for 1 min

♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

(Pending)

• Applicable to Infrared Ray Reflow, 260°C

Typical Applications

• Primarily Suited for DC−DC Converters

• For Ground Loop Isolation, Signal to Noise Isolation

• Communications – Adapters, Chargers

• Consumer – Appliances, Set Top Boxes

• Industrial – Power Supplies, Motor Control, Programmable Logic

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