| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FQPF7N60 | 600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQPF7N60 | 600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperform | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
FQPF7N60 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
7.0Amps,600VoltsN-CHANNELMOSFET | FS First Silicon Co., Ltd | FS | ||
14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | Intersil Intersil Corporation | Intersil | ||
14A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe | HARRIS Harris Corporation | HARRIS | ||
14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
600VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 华汕电子器件汕头华汕电子器件有限公司 | Huashan | ||
600VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
600VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI |
详细参数
- 型号：
FQPF7N60
- 功能描述：
MOSFET 600V N-Channel QFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220F |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
onsemi |
24+ |
TO-220F-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
FAIRCHILD |
24+ |
TO-220F |
8866 |
询价 | |||
仙童 |
06+ |
TO-220F |
4000 |
原装 |
询价 | ||
FSC |
2015+ |
TO220F |
19898 |
专业代理原装现货,特价热卖! |
询价 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
询价 | |||
FAIRCHIL |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
HJ替代 |
2011+ |
TO220F |
50000 |
全新原装进口自己库存优势 |
询价 | ||
FAIRCHIL |
23+ |
TO-220F |
12720 |
全新原装 |
询价 | ||
FAIRCHILD |
17+ |
NA |
6200 |
100%原装正品现货 |
询价 |
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