| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FSYC260D | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
FutureTechnologyDevicesInternationalLtd. | FTDI Future Technology Devices International Ltd. | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDI Future Technology Devices International Ltd. | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDI Future Technology Devices International Ltd. | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDI Future Technology Devices International Ltd. | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDI Future Technology Devices International Ltd. | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDI Future Technology Devices International Ltd. | FTDI | ||
HID-classUSBtoUART/I2CBridgeIC | FTDI Future Technology Devices International Ltd. | FTDI | ||
PointlevelswitchwithbuildupcompensationNocalibrationnecessary YourBenefits •Completeunitconsistingoftheprobeandelectronicinsert: –simplemounting –nocalibrationonstart-up •Activebuild-upcompensation –accurateswitchpoint –highoperationalsafety •Mechanicallyrugged –nowearingparts –longoperatinglife –nomaintenance • | EHEndress+Hauser Group Services AG 恩德斯恩德斯豪斯（中国） | EH | ||
SIDACs SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts | EIC EIC discrete Semiconductors | EIC | ||
SIDACs SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
OutdoorOFCMLT:ARAMIDPEwith6TubesofØ1.9mm60fMMOM2. ProductDescription OutdoordrycoreopticalfiberMultiLooseTubecablewitharamidyarnsasstrengthmemberandpolyethyleneouterjacket.Existingoutof6tubeswitha diameterof1.9mmwith60fibers(5tx12f)MMOM2. | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
OutdoorOFCMLT:GLASSYARNSCSTPEwith6TubesofØ1.9mm60fMMOM2. ProductDescription OutdoordrycoreopticalfiberMultiLooseTubecablewithglassyarnsasstrengthmember,CorrugatedSteelTape(FullRodentProtected)armorand polyethyleneouterjacket.Productfeature:ThiscablehasimprovedrodentprotectionbyCorrugatedSteelTape(FullRodentProte | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
0.2AHighVoltageFastRecoveryRectifiers | TAITRON TAITRON Components Incorporated | TAITRON | ||
NChannelPowerMOSFETwithextremelylowRDS(ON) | GSG Gunter Seniconductor GmbH. | GSG | ||
UniversalOFCMLT:LSZHARAMIDLSZHwith6TubesofØ1.9mm60fMMOM2. ProductDescription Universal(Indoor/Outdoor)drycoreopticalfiberMultiLooseTubecablewithLowSmokeZeroHalogeninnerjacket,aramidyarnsasstrengthmemberand LowSmokeZeroHalogenouterjacket.Existingoutof6tubeswithadiameterof1.9mmwith60fibers(5tx12f)MMOM2. | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
ReduceDowntimeWithQuickAccessToTheRightReplacementFuse | EATONEaton All Rights Reserved. 伊顿伊顿公司 | EATON |
详细参数
- 型号：
FSYC260D
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
05+ |
原厂原装 |
4290 |
只做全新原装真实现货供应 |
询价 | ||
HAR |
23+ |
65480 |
询价 | ||||
INTERSIL |
14+ |
原厂封装 |
9 |
宇航IC只做原装假一罚十 |
询价 | ||
INTERSIL |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
INTERSIL |
24+ |
10 |
全新原装 |
询价 | |||
TI |
N/A |
N/A |
100 |
军工品,原装正品 |
询价 | ||
INTERSIL |
2015+ |
99 |
原装正品 |
询价 |
相关规格书
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相关库存
更多- FSYC260D3
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- FSYC264R
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- FSYE913A0D1
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- FSYE913A0R3
- FSYE923A0D
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