| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SubminiatureKryptonLamswithLens(Clear)-End | GILWAY Gilway Technical Lamp | GILWAY | ||
Dustproof | A-DATAA-Data Technology a-Data Technology | A-DATA | ||
ThermalGapFiller PRODUCTDESCRIPTION Tflex™HD700thermalgapfillercombines5W/mKthermalconductivitywithsuperiorpressure versusdeflectioncharacteristics.Thecombinationwillallowminimalstressoncomponents whilealsoyieldinglowthermalresistance.Asaresult,lessmechanicalandthermalstresse | LSTD Laird Tech Smart Technology | LSTD | ||
DashDriveEliteHE720PortableHardDrive | A-DATAA-Data Technology a-Data Technology | A-DATA | ||
Automaticfiredetectors | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
24-BitADCwithOn-chip3.3VOutputRegulator | AVIAAvia Semiconductor Co., Ltd. 海芯科技海芯科技（厦门）有限公司 | AVIA | ||
LockingDevices | COOPER COOPER | COOPER | ||
N-ChannelPowerMOSFETs,3.0A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFETS FEATURES •LowerRDS(on) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
3.3A,400V,1.800Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
TRANSISTORSN-CHANNEL 400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET®technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
400Volt,1.8OhmHEXFETTO-220ABPlasticPackage 400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestabilityoftheelectricalparameters. Theyarewellsuitedforapplications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-channelenhancementmodepowermostransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
AdvancedPowerMOSFET(400V,1.8ohm,3.3A) AdvancedPowerMOSFET(400V,1.8ohm,3.3A) FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowerRDS(ON):1.408Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
替换型号
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
A |
24+ |
DIP-6 |
113 |
询价 | |||
GTM |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MICROCHIP |
1725+ |
QFN |
6528 |
只做原装正品现货或订货!假一赔十! |
询价 | ||
23+ |
DIP8 |
3880 |
正品原装货价格低qq:2987726803 |
询价 | |||
IR |
22+ |
DIP4 |
5000 |
进口原装!现货库存 |
询价 | ||
IR |
22+ |
DIP4 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
DIP4 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
DIP4 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
DIP4 |
7000 |
询价 | |||
NS |
23+ |
QFN |
1005 |
优势库存 |
询价 |
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