| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
GLUR3910M | SURFCOIL SMT INDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | |
SURFCOILSMTINDUCTORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
HighVoltage/ThickFilmResistors | Riedon Riedon Powertron | Riedon | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
20AND30AMPFASTRECOVERYRECTIFIERDIODES Description ThisrangeoffastrecoverydiodesisdesignedforapplicationsinDCpowersupplies,inverters,choppers,ultrasonicsystemandforuseasafree-wheelingdiode. Features ■Shortreverserecoverytime ■Lowstoredcharge ■Widecurrentrange ■Excellentsurgecapabilities ■Stu | IRF International Rectifier | IRF | ||
RectifiersFastRecovery | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A) | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤115mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
ULTRALOWONRESISTANCE | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesolderingtechniques. Powerdissipationlevelsupto1.5watts arepossibleintypicalsurfacemountapplications. Features VDS(V)=100V ID=16A(VGS=10V) RDS(ON)=115mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF |
详细参数
- 型号：
GLUR3910M
- 功能描述：
SURFCOIL SMT INDUCTORS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPRAGUE-GOODMAN |
21+ |
SMD1008 |
62280 |
询价 | |||
SPRAGUE-GOODMAN |
23+ |
SMD1008 |
62280 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
22+ |
SOP |
2700 |
全新原装自家现货优势! |
询价 | |||
24+ |
SOP |
2012 |
询价 | ||||
2023+ |
5800 |
进口原装,现货热卖 |
询价 | ||||
2023+ |
3000 |
进口原装现货 |
询价 | ||||
台产 |
00+ |
SOJ-40 |
2318 |
原装现货海量库存欢迎咨询 |
询价 | ||
台产 |
22+23+ |
SOJ-40 |
37427 |
绝对原装正品全新进口深圳现货 |
询价 | ||
2015+ |
SOJ40 |
19889 |
一级代理原装现货,特价热卖! |
询价 | |||
GL |
2023+环保现货 |
SOJ40 |
10127 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 |
相关规格书
更多- GLUR4710
- GLUR5610
- GLUR6810
- GL-V027FKU
- GL-V0743US
- GLV12-54/36/40B/115
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相关库存
更多- GLUR4710M
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- GL-V0637U
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- GLV12-6/36/40B/115
- GLV12-8-200/36/40B/115
- GLV12-8-200/37/40B/92
- GLW100B8W3
- GLW15010
- GLW1R520
- GLW2R220
- GLW3809X
- GLW4R720
- GLW6R810
- GLX-1/2
- GLX10N10
- GLX-1-1/2
- GLX110-C
- GLX-12
- GLX120
- GLX-1-4
- GLX140-CF
- GLX17Q-C
- GLX18N10
- GLX-2
- GLX200
- GLX22N10
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- GLX27N10
- GLX-3/4
- GLX-3-4
- GLX40
- GLX50
- GLX60
- GLX80
- GLX82N10
- GLX-A-44-50
- GLX-A-62
- GLX-A-62-BLK
- GLX-A-64-50
- GLXR1010
- GLXR1510
- GLXR2210
- GLXR3310