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HW1310ALPL

Real Walnut Chassis w/ Aluminum Top

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310ALPL

包装:袋 类别:盒子,外壳,机架 盒组件 描述:BOTTOM PANEL FOR HWCHAS SERIES

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310ALPL

包装:袋 类别:盒子,外壳,机架 盒组件 描述:BOTTOM PANEL FOR HWCHAS SERIES

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310BKPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310AL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NPBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF1310NS

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

产品属性

  • 产品编号:

    HW1310ALPL

  • 制造商:

    Hammond Manufacturing

  • 类别:

    盒子,外壳,机架 > 盒组件

  • 系列:

    HWCHAS

  • 包装:

  • 类型:

    底面板

  • 配套使用/相关产品:

    HWCHAS1310

  • 大小 / 尺寸:

    11.732" 长 x 8.740" 宽(298.00mm x 222.00mm)

  • 颜色:

    天然

  • 材料:

    金属 - 铝

  • 描述:

    BOTTOM PANEL FOR HWCHAS SERIES

供应商型号品牌批号封装库存备注价格
Hammond
2020+
N/A
155
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询价
Hammond
22+
NA
155
加我QQ或微信咨询更多详细信息,
询价
SAMTEC/申泰
22+24+
78950
16年现货供应商SAMTEC/申泰连接器
询价
SAMTEC
2023+环保现货
标准封装
2500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
SAMTEC
21+
35200
一级代理/放心采购
询价
HUAWEI
1736+
BGA
8298
只做进口原装正品假一赔十!
询价
HUAWEI
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
HUAWEI
2102+
BGA
6854
只做原厂原装正品假一赔十!
询价
HUAWEI
21+
BGA
5000
全新原装现货 价格优势
询价
HUAWEI
23+
BGA
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多HW1310ALPL供应商 更新时间2024-11-23 10:18:00