首页 >HW1310ALPL>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HW1310ALPL | Real Walnut Chassis w/ Aluminum Top KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | |
HW1310ALPL | 包装:袋 类别:盒子,外壳,机架 盒组件 描述:BOTTOM PANEL FOR HWCHAS SERIES | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | |
HW1310ALPL | 包装:袋 类别:盒子,外壳,机架 盒组件 描述:BOTTOM PANEL FOR HWCHAS SERIES | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | |
RealWalnutChassisw/AluminumTop KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
RealWalnutChassisw/AluminumTop KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
RealWalnutChassisw/AluminumTop KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods | HAMMONDHammond Manufacturing Company Limited 哈蒙德哈蒙德制造有限公司 | HAMMOND | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微电华羿微电子股份有限公司 | HUAYI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微电华羿微电子股份有限公司 | HUAYI | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微电华羿微电子股份有限公司 | HUAYI | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFETPOWERMOSFET | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
FullyAvalancheRated Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
产品属性
- 产品编号:
HW1310ALPL
- 制造商:
Hammond Manufacturing
- 类别:
盒子,外壳,机架 > 盒组件
- 系列:
HWCHAS
- 包装:
袋
- 类型:
底面板
- 配套使用/相关产品:
HWCHAS1310
- 大小 / 尺寸:
11.732" 长 x 8.740" 宽(298.00mm x 222.00mm)
- 颜色:
天然
- 材料:
金属 - 铝
- 描述:
BOTTOM PANEL FOR HWCHAS SERIES
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Hammond |
2020+ |
N/A |
155 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
Hammond |
22+ |
NA |
155 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
SAMTEC/申泰 |
22+24+ |
78950 |
16年现货供应商SAMTEC/申泰连接器 |
询价 | |||
SAMTEC |
2023+环保现货 |
标准封装 |
2500 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
SAMTEC |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
HUAWEI |
1736+ |
BGA |
8298 |
只做进口原装正品假一赔十! |
询价 | ||
HUAWEI |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
询价 | ||
HUAWEI |
2102+ |
BGA |
6854 |
只做原厂原装正品假一赔十! |
询价 | ||
HUAWEI |
21+ |
BGA |
5000 |
全新原装现货 价格优势 |
询价 | ||
HUAWEI |
23+ |
BGA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
相关规格书
更多- HW1310BKPL
- HW136-BULK
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相关库存
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