首页 >HCTS132DMSR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HCTS132DMSR | Radiation Hardened Quad 2-Input NAND Schmitt Trigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | Intersil Intersil Corporation | Intersil | |
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedQuad2-InputNANDSchmittTrigger Description TheIntersilHCTS132MSisaRadiationHardenedQuad2-InputNANDSchmittTriggerinputs.AhighonbothinputsforcestheoutputtoaLowstate. TheHCTS132MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-sp | Intersil Intersil Corporation | Intersil | ||
WidebandRF/PulseTransformer5-200MHz/1-100MHz | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
T-1(3mm)HighIntensityLEDLamps Description ThisfamilyofT-1lampsisspeciallydesignedforapplicationsrequiringhigheron-axisintensitythanisachievablewithastandardlamp.Thelightgeneratedisfocusedtoanarrowbeamtoachievethiseffect. Features •HighIntensity •Choiceof3BrightColors HighEffici | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
GaAsMMICHIGH-ISOLATION GeneralDescription TheHMC132chipisafast,broadbandSPDTswitchfeaturinghigh(40dB)isolationovertheentireband,providedbyon-chipgroundvias.Theswitchisnon-reflectiveatboththeRF1andRF2ports.Anegativecontrolvoltageof0/-5Vdcto0/-7Vdccontrolsthechannelsele | Hittite Hittite Microwave Corporation | Hittite | ||
HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA) | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
HIGHDENSITYCARDEDGE.050[1.27]VESAMICROCHANNELARCHITECTURE(MCA) | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
DigitalPressureSensor | ALPSALPS ELECTRIC CO.,LTD. 阿尔卑斯阿尔卑斯电气株式会社 | ALPS | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPinDiode Features ●Lowcapacitance.(C=0.5pFmax) ●Lowforwardresistance.(rf=2.0Ωmax) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPinDiode Features ●Lowcapacitance.(C=1.0pFmax) ●Lowforwardresistance.(rf=0.7Ωmax) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features •Lowcapacitance.(C=0.5pFmax) •Lowforwardresistance.(rf=2.0Ωmax) •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
PROGRAMMABLEFLEXPC™CLOCKFORP4PROCESSOR FEATURES: •3PLLarchitecture •USB48has180°phasedifferencefromDOT48andVCH •3V66leadPCI1.5nsto3.5ns •Band-gapcircuitfordifferentialoutput •Highpower-noiserejectionratio •100MHzto200MHzCPUfrequency •VCOfrequencyupto1.1G •Supportindexblockread/write •A | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
PROGRAMMABLEFLEXPC™CLOCKFORP4PROCESSOR FEATURES: •3PLLarchitecture •USB48has180°phasedifferencefromDOT48andVCH •3V66leadPCI1.5nsto3.5ns •Band-gapcircuitfordifferentialoutput •Highpower-noiserejectionratio •100MHzto200MHzCPUfrequency •VCOfrequencyupto1.1G •Supportindexblockread/write •A | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
HCTS132DMSR
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
Radiation Hardened Quad 2-Input NAND Schmitt Trigger
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
05+ |
原厂原装 |
4356 |
只做全新原装真实现货供应 |
询价 | ||
ISL |
23+ |
65480 |
询价 | ||||
H |
18 |
CSOP |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
H |
23+ |
CSOP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
H |
2318+ |
CSOP |
4862 |
只做进口原装!假一赔百!自己库存价优! |
询价 | ||
Renesas Electronics |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
HARRIS/哈里斯 |
23+ |
CFP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
INTERSILIL |
2023+ |
smd |
5800 |
进口原装,现货热卖 |
询价 | ||
24+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
H |
21+ |
CDIP |
645 |
航宇科工半导体-央企合格优秀供方! |
询价 |
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