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HM10N80A

silicon N-channel Enhanced

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM10N80F

siliconN-channelEnhancedVDMOSFETs

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS10N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMS10N80K

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IXFA10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFA10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFA10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFH10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFP10N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFP10N80P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFP10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFP10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFQ10N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFQ10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFQ10N80P

PowerMOSFET

IXYS

IXYS Corporation

JCS10N80C

N-CHANNELMOSFET

APPLICATIONS Switchedmodepower suppliesy Electronicballast FEATURES Lowgatecharge LowCrss(typical8.6pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS10N80FC-F-B

N-CHANNELMOSFET

APPLICATIONS Switchedmodepower suppliesy Electronicballast FEATURES Lowgatecharge LowCrss(typical8.6pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS10N80FC-F-BR

N-CHANNELMOSFET

APPLICATIONS Switchedmodepower suppliesy Electronicballast FEATURES Lowgatecharge LowCrss(typical8.6pF) Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

供应商型号品牌批号封装库存备注价格
H
23+
TO-3P
10000
公司只做原装正品
询价
HMSEMI
2022+
TO-3P
50000
原厂代理 终端免费提供样品
询价
H
23+
TO-3P
6000
原装正品,支持实单
询价
HMSEMI
23+
TO-3P
6800
专注配单,只做原装进口现货
询价
HMSEMI
23+
TO-3P
6800
专注配单,只做原装进口现货
询价
H
24+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
H&M
23+
TO-220F
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HYNIX
23+
SMD
9365
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
HYNIX
1922+
SMD
3000
绝对进口原装现货
询价
HYNIX
2023+环保现货
SMD
60000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
更多HM10N80A供应商 更新时间2024-11-22 14:30:00