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HMIGTO1310FCW

Advanced touchscreen panel, Harmony GTO, 3.5 Color Touch QVGA TFT, coated display without logo

SCHNEIDERSchneider Electric

施耐德施耐德电气

HMIGTO1310FW

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,logoremoved

SCHNEIDERSchneider Electric

施耐德施耐德电气

HW1310ALPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310BKPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310AL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微电华羿微电子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.036Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NPBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF1310NS

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

供应商型号品牌批号封装库存备注价格
Telemecanique
5
全新原装 货期两周
询价
Telemecanique
2022+
1
全新原装 货期两周
询价
施耐德
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Hammond
2020+
N/A
155
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Hammond
22+
NA
155
加我QQ或微信咨询更多详细信息,
询价
24+
SMD28P
3200
绝对原装自家现货!真实库存!欢迎来电!
询价
06+
原厂原装
4306
只做全新原装真实现货供应
询价
HL(华联)
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
SCHNEIDERELECTRIC
2122+
NA
15688
全新原装正品现货,优势渠道可含税,假一赔十
询价
SCHNEIDER ELECTRIC
2306+
NA
6680
原装正品公司现货,实单来谈
询价
更多HMIGTO1310FCW供应商 更新时间2024-11-26 16:06:00