IXFE180N10中文资料IXYS数据手册PDF规格书

HiPerFET Power MOSFET

Single Die MOSFET

Features

• Conforms to SOT-227B outline

• Encapsulating epoxy meets UL 94 V-0, flammability classification

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density