IQXO-740

Crystal Clock Oscillator Specification

IRC740

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease

IRF740

N-ChannelPowerMOSFETs,10A,350V/400V

IRF740

N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET

ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U

IRF740

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRF740

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF740

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

IRF740

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis

IRF740

10A,400V,0.550Ohm,N-ChannelPowerMOSFET

10A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

IRF740

N-ChannelPowerMOSFETs

IRF740

10A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

IRF740

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF740areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

IRF740

iscN-ChannelMOSFETTransistor

•DESCRITION •Switchmodepowersupply •Uninterruptablepowersupply •Highspeedpowerswitching •FEATURES •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdev

IRF740

PowerMOSFET

IRF740

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent-ID=10A@TC=25°C •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersup

IRF740

SEMICONDUCTORS

IRF740

PowerMOSFET

IRF740A

HEXFETPowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr

IRF740A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower

IRF740A

PowerMOSFET